Pellegrino, J.
, Guyer, J.
and Gajewski, D.
(2000),
NCT In-Situ Probes and the MBE Growth of Compound Semiconductors, NIST Interagency/Internal Report (NISTIR), National Institute of Standards and Technology, Gaithersburg, MD
(Accessed June 30, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
NCT In-Situ Probes and the MBE Growth of Compound Semiconductors
Published
Author(s)
Joseph G. Pellegrino, , Donald A. Gajewski
Abstract
Our research is centered on the use of in-situ measurement probes that monitor semiconductor growth. Our goal is to correlate material parameters observed during growth with device performance. A goal of this presentation is to develop collaborations that will help to develop a model of the thermal behavior of the substrate heater/wafer temperature during the molecular beam epitaxy (MBE) growth process. This model would significantly assist the development of next-generation temperature feedback controls on MBE and MOCVD deposition equipment. Better control of the substrate temperature will also lead to more optimized MBE growth of semiconductor heterostructures.Citation
NIST Interagency/Internal Report (NISTIR) -
NIST Pub Series
Pub Type
NIST Pubs
Keywords
in-situ measurement probes, semiconductors, substrate, moleculr beam epitaxy, MBE
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created October 10, 2000, Updated October 12, 2021