Vogel, E.
, Richter, C.
and Rennex, B.
(2003),
A Capacitance-Voltage Model for Polysilicon-Gated MOS Devices Including Substrate Quantization Effects Based on Modification of the Total Semiconductor Charge, Solid-State Electronics
(Accessed January 15, 2025)
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A Capacitance-Voltage Model for Polysilicon-Gated MOS Devices Including Substrate Quantization Effects Based on Modification of the Total Semiconductor Charge
Published
Author(s)
, ,
Abstract
We present a model for simulating the capacitance-voltage characteristics of polysilicon-gated MOS devices with thin oxides. The model includes substrate quantization effects through a modification of the total semiconductor charge. Therefore, solutions for capacitance-voltage can be quickly obtained without the computational burden of solving over a physical grid. The model includes polysilicon depletion by self-consistently solving the Poisson equation. We conclude with comparisons of the capacitance-voltage characteristics obtained with this model and those obtained by self-consistent solutions to the Schroedinger and Poisson equations. Good agreement was observed over a wide range of oxide thickness and substrate doping.Citation
Solid-State Electronics
Volume
47
Pub Type
Journals
Keywords
MOS structure, quantum mechanical effects, MOS model, capacitance-voltage, poly-depletion, thin oxides
Citation
Issues
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Created March 9, 2003, Updated October 12, 2021