Contact Induced Crystallinity for High Performance Soluble Acene-Based TFTs

Published

February 17, 2008

Author(s)

David J. Gundlach, James Royer, Behrang Hamadani, Lucile C. Teague, Andrew J. Moad, Oana Jurchescu, Oleg A. Kirillov, Lee J. Richter, James G. Kushmerick, Curt A. Richter, Sungkyu Park, Thomas Jackson, Sankar Subramanian, John E. Anthony

Abstract

Organic electronics present a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. However, the lack of low-temperature low-cost deposition and patterning techniques limits the potential for the significant reductions to manufacturing costs which are viewed as critical to commercializing this field of research. We report on soluble acene-based organic thin film transistors (OTFTs) where the microstructure of as-cast films can be precisely controlled via interfacial chemistry. Chemical optimization of the source/drain contact interface is a novel route to self-patterning of soluble organic semiconductors and enables the growth of highly ordered regions along opposing contact edges which extend into the transistor channel. The unique film forming properties allows us to fabricate high performance OTFTs and deterministically study the influence of the film microstructure on the electrical characteristics of devices. These studies provide insight to charge injection and transport at the microscopic scale.

Citation

Nature Materials

Pub Type

Journals

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Keywords

Microscopy, Microstructure, Mobility, Organic Semiconductor, Organic Transistor

Citation

Gundlach, D. , Royer, J. , Hamadani, B. , Teague, L. , Moad, A. , Jurchescu, O. , Kirillov, O. , Richter, L. , Kushmerick, J. , Richter, C. , Park, S. , Jackson, T. , Subramanian, S. and Anthony, J. (2008), Contact Induced Crystallinity for High Performance Soluble Acene-Based TFTs, Nature Materials, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32683 (Accessed December 26, 2024)