Chiaramonti Debay, A.
, Schreiber, D.
, Egelhoff Jr., W.
, Seidman, D.
and Petford-Long, A.
(2008),
Effect of Annealing on Transport Properties of MgO-based Magnetic Tunnel Junctions, Applied Physics Letters, [online], https://doi.org/10.1063/1.2970964, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=854028
(Accessed January 15, 2025)
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Effect of Annealing on Transport Properties of MgO-based Magnetic Tunnel Junctions
Published
Author(s)
, Daniel Schreiber, , D. N. Seidman, Amanda K. Petford-Long
Abstract
The effect of annealing on the transport behavior of CoFe/MgO/CoFe magnetic tunnel junctions has been studied using a combination of site-specific in-situ transmission electron microscopy and three-dimensional atom probe tomography. Annealing at 340 °C for 1 hour in vacuum led to an increase in the resistance of the junctions as compared to the as-grown films. a shift in the conductance curve minimum from zero volts for the as-grown specimen could be correlated with the presence of a CoFe oxide at the lower ferromagnet-barrier interface. The conductance curve for the annealed specimen, however, was found to be symmetric about zero volts. Annealing decreased the asymmetry in the conductance by making the tunnel barrier more homogeneous chemically. This occurred as a result of the diffusion of Co and Fe into the barrier from both the top and bottom ferromagnetic layers.Citation
Applied Physics Letters
Volume
93
Pub Type
Journals
Download Paper
Keywords
magnetic tunnel junctions, MgO transport annealing
Citation
Issues
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Created September 11, 2008, Updated October 12, 2021