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Kristen Genter, Matthew Brubaker, Samuel Berweger, Jonas Gertsch, Kris A. Bertness, Pavel Kabos, Victor Bright
Gallium nitride nanowires (NWs) grown on silicon-on-insulator wafers by means of selective area epitaxy are directly integrated into scanning probe cantilever
Matthew D. Brubaker, Bryan T. Spann, Kristen L. Genter, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness
Nanowire-based ultraviolet (UV) LEDs hold great promise as nanoscale light sources, potentially enabling advanced scanning microscopy probes capable of
Samuel Berweger, Gang Qiu, Yixiu Wang, Benjamin Pollard, Kristen Genter, Thomas Mitchell (Mitch) Wallis, Wenzhuo Wu, Peide Ye, Pavel Kabos
Bipolar transport underpins a wide range of semiconductor homojunction device functionalities such as pn junctions or transistors. The capability to image and
Matthew Brubaker, Kristen Genter, Alexana Roshko, Paul T. Blanchard, Bryan T. Spann, Todd E. Harvey, Kris A. Bertness
Ultraviolet light-emitting diodes (UV LEDs) fabricated from N-polar AlGaN/GaN core-shell nanowires with p-i-n structure produced electroluminescence at 365 nm
Matthew D. Brubaker, Kristen L. Genter, Bryan T. Spann, Alexana Roshko, Paul T. Blanchard, Todd E. Harvey, Kristine A. Bertness
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N- polar selective area growth on Si(111) substrates. The N-polar