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Qiliang Li, Sang-Mo Koo, Hao Xiong, Monica D. Edelstein, John S. Suehle, Xiaoxiao Zhu, D. E. Ioannou, Curt A. Richter
We report metrology methods to characterize nanowires. In this work, representative devices and test structures, including nanoelectromechanical switches, non
Qiliang Li, Sang-Mo Koo, Monica D. Edelstein, John S. Suehle, Curt A. Richter
Electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes have been fabricated successfully by
Qiliang Li, Sang-Mo Koo, Curt A. Richter, Monica D. Edelstein, John E. Bonevich, Joseph Kopanski, John S. Suehle, Eric M. Vogel
Nanowires and nanotubes are being intensively investigated for nanoelectronic transport applications. The integration of such nanostructures into circuitry
Qiliang Li, Sang-Mo Koo, Curt A. Richter, Monica D. Edelstein, John E. Bonevich, Joseph Kopanski, John S. Suehle, Eric M. Vogel
The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge
Wenyong Wang, Hao Xiong, Monica D. Edelstein, David J. Gundlach, John S. Suehle, Curt A. Richter, Woong-Ki Hong, Takhee Lee
Field effect transistors (FETs) of single-crystalline ZnO nanowires have been fabricated and low frequency (f) noise characterizations of the ZnO nanowire FETs