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Sujitra Pookpanratana (Fed)
Scientist
Dr. Pookpanratana is a member of the research staff within the Advanced Electronics Group in the Nanoscale Device Characterization Division of the Physical Measurement Laboratory (PML). Dr. Pookpanratana’s current research interests include investigating the electronic and chemical properties of materials (e.g., wide bandgap semiconductors) for advancing next generation power electroncis, and on the development and advancement of photoemission electron microscopy (PEEM). During 2023 – 2026, Dr. Pookpanratana will serve as the chair of the Gamma, X-Ray and Extreme UV Optics Technical Group in Optica (formerly the Optical Society of America). In 2020 – 2021, Dr. Pookpanratana served as the chair of the AVS Mid-Atlantic chapter.
Prior to 2019, Dr. Pookpanratatana’s research activities at NIST included the electronic structure of molecular organic semiconductors and other candidate nanoelectronic systems. With the latter, a complementary measurement approach was applied with electrical characterization, electron and optical spectroscopies. During her graduate studies, she applied both lab- and synchrotron-based x-ray and electron spectroscopies to thin-film III-nitrides, CIGS- and CdTe-based photovoltaics.
Link to Google Scholar profile
projects
- Advancing PEEM-based Metrology
- Electronic and Chemical Properties of Systems for Advancing Solid State Quantum-based Devices
SELECTED PUBLICATIONS
- S. Pookpanratana, R. France, R. Félix, R. Wilks, L. Weinhardt, T. Hofmann, L. Tati Bismaths, F. Kronast, S. Mulcahy, T. D. Moustakas, M. Bär, and C. Heske, “Microstructure of Vanadium-Based Contacts on n-type GaN,” J. Phys. D: Appl. Phys. 45, 105401 (2012).
- S. Pookpanratana, X. Liu, N. R. Paudel, L. Weinhardt, M. Bär, Y. Zhang, A. Ranasinghe, F. Khan, M. Blum, W. Yang, A. D. Compaan, and C. Heske, “Effects of post-deposition treatments on surfaces and interfaces in CdTe/CdS Solar Cells,” Appl. Phys. Lett. 97, 172109 (2010).
- S. Zhang, […] S. J. Pookpanratana, “Controllable, Wide-Ranging n- and p-Doping of Monolayer Group 6 Transition-metal Disulfides and Diselenides” Advanced Materials 30, 1802991 (2018).