Chen, R.
, Mani, H.
, Marsh, P.
, Al Hadi, R.
, Shrestha, P.
, Campbell, J.
, Chen, C.
, Chen, H.
, Galatsis, K.
and Chang, M.
(2024),
A 4-mW 2.2-6.9 GHz LNA in 16nm FinFET Technology for Cryogenic Applications, IEEE Microwave and Wireless Technology Letters, [online], https://doi.org/10.1109/LMWT.2024.3477328, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=957909
(Accessed January 28, 2025)
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A 4-mW 2.2-6.9 GHz LNA in 16nm FinFET Technology for Cryogenic Applications
Published
Author(s)
Runzhou Chen, Hamdi Mani, Phil Marsh, Richard Al Hadi, , , Christopher Chen, Hao-Yu Chen, Kosmas Galatsis, Mau-Chung Frank Chang
Abstract
This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates in a wide temperature range using 16nm FinFET technology. The LNA is packaged and measured at both room and cryogenic temperatures. It features a compact multi-stage cascode topology and operates between 2.2-6.9 GHz, with a noise figure (NF) of 0.36 dB, a peak gain of 31.4 dB and a total DC power consumption of 4 mW at 18 K temperature.Citation
IEEE Microwave and Wireless Technology Letters
Volume
34
Issue
12
Pub Type
Journals
Download Paper
Keywords
Low Noise Amplifier, LNA, FinFET LNA, Cryogenic FinFET
Citation
Issues
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Created December 9, 2024, Updated December 10, 2024