Al, B, and Ga Ion-Implantation Doping of SiC

Published

November 1, 2000

Author(s)

E Handy, M V. Rao, O W. Holland, P Chi, K A. Jones, M A. Derenge, R D. Vispute, T Venkatesan

Abstract

A Series of single energy Al, B, and Ga ion implants were performed in the energy range 50 keV - 4 MeV into 6H-SiC to characterize the implant depth profiles using secondary ion mass spectrometry (SIMS). From the implant depth profiles empirical formulae were developed to model the range statistics as functions of energy. Multiple energy implants were performed into 6H- and 4H-SiC and annealed with both AlN and graphite encapsulants to determine the ability of the encapsulants to protect the implants from out-diffusion and redistribution. Al and Ga were thermally stable, but B out-diffused even with A1N or graphite encapsulation. Electrical activation was determined by Hall and capacitance-voltage measurements. An acceptor substitutional concentration of 7 x 10¹⁶cm^-3 was achieved for 1 x 10¹⁷ cm^-3 Al implantation.

Citation

Journal of Electronic Materials

Volume

29

Issue

No. 11

Pub Type

Journals

Keywords

A1N, diffusion, Ion Implantation, SiC, SIMS

Citation

Handy, E. , Rao, M. , Holland, O. , Chi, P. , Jones, K. , Derenge, M. , Vispute, R. and Venkatesan, T. (2000), Al, B, and Ga Ion-Implantation Doping of SiC, Journal of Electronic Materials (Accessed October 10, 2025)