U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Assessing Radiation Hardness of Silicon Photonic Sensors.

Published

Author(s)

Zeeshan Ahmed, Lonnie T. Cumberland, Ronald E. Tosh, Nikolai N. Klimov, Ileana M. Pazos, Ryan P. Fitzgerald

Abstract

In recent years silicon photonic platforms have undergone rapid maturation enabling not only optical communication but complex scientific experiments ranging from sensors applications to fundamental physics inquiries. There is con-siderable interest in deploying photonics-based communication and science instruments in harsh environments such as outer space, where radiation damage is a significant concern. In this study, we have examined the impact of - radiation up to 1 MGy dose on silicon photonic devices. We do not find any systematic impact of radiation on passivated devices, indicating the extreme durability of passivated silicon devices under harsh conditions
Citation
ACS Photonics
Pub Type
Journals

Download Paper

https://doi.org/10.1038/s41598-018-31286-9

Keywords

nanophotonics, thermometry, raidation, hardness, e-grey
Ionizing radiation metrology and Nanophotonics

Citation

Ahmed, Z. , Cumberland, L. , Tosh, R. , Klimov, N. , Pazos, I. and Fitzgerald, R. (2018), Assessing Radiation Hardness of Silicon Photonic Sensors., ACS Photonics, [online], https://doi.org/10.1038/s41598-018-31286-9 (Accessed December 22, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created August 13, 2018, Updated November 10, 2018