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PUBLICATIONS

Atomic Ordering Induced Energy Gap Reductions in GaAsSb Epilayers

Published

Author(s)

B P. Gorman, A G. Norman, R Lukic-Zrnic, T D. Golding, Anthony G. Birdwell, Christopher Littler

Abstract

A series of GaAs1-xSbx epilayers (0.51≪x≪0.71) grown by molecular-beam epitaxy on GaAs substrates with surface orientations of (001), (001) -8° toward (111)A, (001) -8° toward (111)B, (115)A, (115)B, (113)A, and (113)B were investigated using temperature-dependent Fourier transform infrared (FTIR) spectroscopy and transmission electron microscopy. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by FTIR absorption and corroborated by superlattice reflections in electron diffraction. Contrary to previous investigations of ordering in III-V alloys, a marked energy-gap reduction, corresponding to CuPt-B-type ordering, is observed in the GaAs1-xSbx grown on (111)A-type substrate offcuts.
Citation
Journal of Applied Physics
Volume
97
Issue
6
Pub Type
Journals

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Semiconductors

Citation

Gorman, B. , Norman, A. , Lukic-Zrnic, R. , Golding, T. , Birdwell, A. and Littler, C. (2005), Atomic Ordering Induced Energy Gap Reductions in GaAsSb Epilayers, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=906288 (Accessed October 27, 2025)

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Created February 28, 2005, Updated October 12, 2021
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