Conrad, B.
, Chan, C.
, Loth, M.
, Parkin, S.
, Zhang, X.
, Anthony, J.
and Gundlach, D.
(2010),
Characterization of a Soluble Anthradithiophene Derivative, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=905704
(Accessed December 26, 2024)
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Characterization of a Soluble Anthradithiophene Derivative
Published
Author(s)
, , Marsha A. Loth, Sean R. Parkin, , John E. Anthony,
Abstract
The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to readily form single crystals with a maximum observed saturation mobility µS of 0.07cm2/Vs, current on-off ratios Ion/Ioff >107, and subthreshold slopes S ~1dec/V. A previously unreported novel columnar stacking crystal structure, with a π/4 radian rotational offset between neighboring molecules, is observed in TBDMS crystals. Electronic current noise in the single crystal TBDMS-TFTs is found to vary inversely with gate voltage, suggesting a mobility fluctuation generation mechanism.Citation
Applied Physics Letters
Volume
97
Pub Type
Journals
Download Paper
Keywords
device, single crystal, organic, transistor, noise, TFT, AFM
Citation
Issues
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Created October 1, 2010, Updated February 19, 2017