Rutter, G.
, Guisinger, N.
, Crain, J.
, First, P.
and Stroscio, J.
(2010),
Edge structure of epitaxial graphene islands, Physical Review B, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=903584
(Accessed October 31, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Edge structure of epitaxial graphene islands
Published
Author(s)
, , , Phillip N. First,
Abstract
Graphene islands grown epitaxially on 6H-SiC(0001) were studied using scanning tunneling microscopy and spectroscopy. Under specific growth conditions, {approzimately equal}10 nm single-layer graphene islands are observed on top of the SiC buffer layer and align with the SiC(0001)-1X1 lattice directions. Atomic-resolution images show that the edges of the island closely follow an armchair-edge configuration.Citation
Physical Review B
Volume
81
Pub Type
Journals
Download Paper
Keywords
Graphene, Epitaxial Graphene, scanning tunneling microscopy
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created June 7, 2010, Updated February 19, 2017