Rani, A.
, Guo, S.
, Krylyuk, S.
and Davydov, A.
(2018),
Electronic Characteristics of MoSe2 and MoTe2 for Nanoelectronic Applications, IEEE Transactions on Electron Devices
(Accessed November 28, 2024)
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Electronic Characteristics of MoSe2 and MoTe2 for Nanoelectronic Applications
Published
Author(s)
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Abstract
Single-crystalline MoSe2 and MoTe2 platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in range of 5.5 nm to 8.5 nm, MoTe2 shows p- type, whereas MoSe2 with channel thickness range of 1.6 nm to 10.5 nm, shows n-type conductivity behavior. At room temperature, both MoSe2 and MoTe2 FETs have high ON/OFF current ratio and low contact resistance. Controlling charge carrier type and mobility in MoSe2 and MoTe2 layers can pave a way for utilizing these materials for heterojunction nanoelctronic devices with superior performance.Citation
IEEE Transactions on Electron Devices
Pub Type
Journals
Keywords
MoSe2, MoTe2, Chemical Vapor Transport, Phase Transition, X-ray Diffraction, Raman
Citation
Issues
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Created October 14, 2018, Updated October 12, 2021