U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Enhanced Thermoelectric Properties for Cu2ZnSnSe4 with Ga-doping

Published

Author(s)

Kaya Wei, Laura Beauchemin, Hsin Wang, Joshua B. Martin, George S. Nolas

Abstract

Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu have been synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, ρ, and Seebeck coefficient, S, for these materials decrease with increasing Ga doping; both mobility and effective mass increase with Ga doping. The power factor (S2/ρ) therefore increase with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity, suggesting another approach to achieving optimized thermoelectric properties. This work is part of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.
Citation
Journal of Alloys and Compounds
Pub Type
Journals

Download Paper

DOI Link

Keywords

quaternary chalcogenides, thermoelectric properties, gallium doping
Materials

Citation

Wei, K. , Beauchemin, L. , Wang, H. , Martin, J. and Nolas, G. (2015), Enhanced Thermoelectric Properties for Cu2ZnSnSe4 with Ga-doping, Journal of Alloys and Compounds, [online], https://doi.org/10.1016/j.jallcom.2015.08.046 (Accessed October 31, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created August 22, 2015, Updated October 12, 2022