Zink, B.
, Madhavan, A.
, Borders, W.
and McClelland, J.
(2025),
Exploration of the viability of TiN/TiOX ReRAM in Computational Random-Access Memory (CRAM), Proceedings 2024 IEEE International Conference on Rebooting Computing (ICRC), San Diego, CA, US, [online], https://doi.org/10.1109/ICRC64395.2024.10937018, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=958920
(Accessed April 17, 2025)
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Exploration of the viability of TiN/TiOX ReRAM in Computational Random-Access Memory (CRAM)
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Abstract
In-memory computing is a promising solution for solving the Von-Neumann bottleneck. In particular, computational random-access memory (CRAM) is a promising form of in-memory computing where cascading logic operations can be performed directly within the memory array. However, a system that utilizes magnetoresistve devices as the memory element in CRAM only gave the correct answer in 63 % of the trials. One way to improve the accuracy is to build CRAM cells using resistive devices with larger ON/OFF ratios. In this study, we explore the performance of CRAM using resistive random-access memory (ReRAM) cells. Using experimental data obtained from various TiN/TiOX-based ReRAM devices in Monte Carlo simulations, we determine that the performance of the full adder operation using ReRAM based CRAM is still subject to the same inaccuracies as CRAM that utilizes magnetoresistive devices. However, our analysis reveals that by reducing the write voltages and removing the effects of complementary resistive switching in the ReRAM devices, approximately 100 % accuracy can be achieved.Proceedings Title
Proceedings 2024 IEEE International Conference on Rebooting Computing (ICRC)
Conference Dates
December 16-17, 2024
Conference Location
San Diego, CA, US
Conference Title
The 9th Annual IEEE International Conference on Rebooting Computing (ICRC)
Pub Type
Conferences
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Keywords
In-Memory Computing, Computational Random-Access Memory, Resistive Random-Access Memory
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Created March 27, 2025, Updated April 14, 2025