Cheung, K.
and O'Sullivan, B.
(2023),
A field-effect transistor-based room-temperature quantum current source, Applied Physics Letters, [online], https://doi.org/10.1063/5.0146398, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=936002
(Accessed December 26, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
A field-effect transistor-based room-temperature quantum current source
Published
Author(s)
, Barry J O'Sullivan
Abstract
The work provides a proof-of-concept demonstration of the room-temperature quantum current source based on nanoscale metal-oxide-semiconductor-Field-Effect-Transistor (MOSFET). Using low leakage MOSFET, the current pump achieved 1.00011 ± 0.00022 charges per cycle without any leakage correction scheme. The accuracy is limited by noise in the very low current measurement, and by calibration uncertainty.Citation
Applied Physics Letters
Volume
122
Issue
18
Pub Type
Journals
Download Paper
Keywords
quantum current, MOSFET, room temperature, charge-pumping
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created May 4, 2023, Updated August 3, 2023