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PUBLICATIONS

Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?

Published

Author(s)

Jason T. Ryan, Richard G. Southwick, Jason P. Campbell, Kin P. Cheung, John S. Suehle

Abstract

We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different than its actual physical depth, and (2) only a fraction of detrapping charge may contribute to the CP current (ICP) resulting in analysis errors. Thus, the relationship between frequency and defect depth is much more complex than what has been previously reported.
Proceedings Title
IEEE International Integrated Reliability Workshop Final Report
Conference Dates
October 14-18, 2012
Conference Location
South Lake Tahoe, CA
Conference Title
IEEE International Integrated Reliability Workshop
Pub Type
Conferences
Semiconductors and Polymers

Citation

Ryan, J. , Southwick, R. , Campbell, J. , Cheung, K. and Suehle, J. (2013), Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?, IEEE International Integrated Reliability Workshop Final Report, South Lake Tahoe, CA (Accessed January 2, 2025)

Issues

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Created January 31, 2013, Updated February 19, 2017