GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy

Published

September 25, 2014

Author(s)

Joel Weber, Paul T. Blanchard, Aric Sanders, Jonas Gertsch, Steven George, Samuel Berweger, Atif A. Imtiaz, Thomas Mitchell (Mitch) Wallis, Kris A. Bertness, Pavel Kabos, Norman A. Sanford, victor bright

Abstract

We report on the fabrication of a GaN nanowire probe for near-field scanning microwave microscopy. The probe has a capacitive resolution of 0.03 fF, surpassing that of a commercial Pt tip. Imaging of MoS2 sheets found the probe to be immune to surface contamination, owing to its flexible, high- aspect ratio morphology. By improving microwave and topographical sensitivity in a mechanically robust architecture, this probe serves as an ideal platform for additional, complimentary scanning probe techniques.

Citation

Nanotechnology

Volume

25

Issue

41

Pub Type

Journals

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DOI Link

Keywords

Scanning microwave microscopy, gallium nitride, nanowires, atomic layer deposition, molybdenum disulphide

Citation

Weber, J. , Blanchard, P. , Sanders, A. , Gertsch, J. , George, S. , Berweger, S. , Imtiaz, A. , Wallis, T. , Bertness, K. , Kabos, P. , Sanford, N. and Bright, V. (2014), GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy, Nanotechnology, [online], https://doi.org/10.1088/0957-4484/25/41/415502 (Accessed January 14, 2025)