Bertness, K.
, Sanford, N.
and Davydov, A.
(2011),
GaN Nanowires Grown by Molecular Beam Epitaxy, IEEE Journal of Selected Topics in Quantum Electronics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=909502
(Accessed December 3, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
GaN Nanowires Grown by Molecular Beam Epitaxy
Published
Author(s)
, ,
Abstract
The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of residual strain, exclusion of most extended defects, long photoluminescence lifetime, low surface recombination velocity,and high mechanical quality factor. The high purity of the nanowires grown by this method allows for controllable ntype doping. P-type doping presents more challenges but has been demonstrated in active light- emitting diode devices. The present understanding of nucleation and growth of these materials is also reviewed.Citation
IEEE Journal of Selected Topics in Quantum Electronics
Volume
17
Issue
4
Pub Type
Journals
Download Paper
Keywords
Crystal growth, nanotechnology, photoluminescence, semiconductor materials
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created August 1, 2011, Updated December 19, 2019