Bennett, H.
(1998),
High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Densities of States and Effective Intrinsic Carrier Concentrations, Journal of Applied Physics
(Accessed April 20, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
High Dopant and Carrier Concentration Effects in Gallium Aluminum Arsenide: Densities of States and Effective Intrinsic Carrier Concentrations
Published
Author(s)
Citation
Journal of Applied Physics
Volume
83
Issue
6
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created March 15, 1998, Updated February 17, 2017