Arz, U.
, Williams, D.
, Walker, D.
and Grabinski, H.
(2000),
High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers, Tech. Dig., Automatic Radio Frequency Techniques Group (ARFTG) Conference, Boulder, CO, USA, [online], https://doi.org/10.1109/MWSYM.2000.863258, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=5950
(Accessed December 15, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
High-Frequency Behavior of Coupled CMOS Interconnects Built in Different Metallization Layers
Published
Author(s)
, , , Hartmut Grabinski
Abstract
In this paper we apply a broadband measurement method to determine the propagation characteristics of coupled-line structures fabricated in different metallization layers of a 0.25 5m CMOS technology. We show that the matrices of frequency-dependent line parameters, as extracted from calibrated four-port S-parameter measurements, agree well with data predicted by numerical calculations, and discuss the impact of metal level height above the substrate on the transmission characteristics.Proceedings Title
Tech. Dig., Automatic Radio Frequency Techniques Group (ARFTG) Conference
Volume
38
Conference Dates
November 30-December 1, 2000
Conference Location
Boulder, CO, USA
Pub Type
Conferences
Download Paper
Keywords
coupled lines, lossy substrate, microstrip, silicon, transmission line
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created November 30, 2000, Updated October 12, 2021