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Internal quantum efficiency modeling of silicon photodiodes

Published

Author(s)

Thomas R. Gentile, Steven W. Brown, Keith R. Lykke, Ping-Shine Shaw, John T. Woodward IV

Abstract

Results are presented for modeling of the internal quantum efficiency (IQE) of silicon photodiodes in the 400 nm to 900 nm wavelength range. The IQE data are based on measurements of the external quantum efficiencies of three transmission trap detectors using an extensive set of laser wavelengths, along with the transmittance of the traps. We find that a simplified version of a previously reported IQE model fits the data with an accuracy of better than 0.01 %
Citation
Applied Optics
Volume
49
Pub Type
Journals

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Keywords

optical metrology, radiometry, responsivity, silicon, trap detector

Citation

, T. , Brown, S. , Lykke, K. , Shaw, P. and Woodward, J. (2010), Internal quantum efficiency modeling of silicon photodiodes, Applied Optics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=904680 (Accessed December 17, 2024)

Issues

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Created April 1, 2010, Updated February 19, 2017