Intra-grain local luminescence properties of CdSe0.1Te0.9 Thin Films

Published

December 25, 2023

Author(s)

Ganga Neupane, Behrang Hamadani, David Albin, Joel Duenow, Matthew Reese, Susanna Thon

Abstract

We report on the local photoluminescence properties of grains and grain boundaries of CdSe0.1Te0.9 thin film deposited by the colossal grain growth method using a wide-field hyperspectral imaging technique. We observed significant variations in the photoluminescence intensity of both individual grains and also that of grain boundaries. Multiple sub-bandgap defect peaks were captured in the luminescence spectra in the energy range 1.2 eV to 1.6 eV. The intensity and peak positions of these sub-gap emissions were slightly different among various grains and at the grain boundaries, revealing intra- and inter-grain variations in these polycrystalline thin films. A recently-developed density-of-states based photoluminescence model was extended to include multiple peaks and was fitted to the data. We observed that at a fixed temperature, the quasi-Fermi level splitting energy and a disordered energy parameter can be extracted locally by use of this model.

Proceedings Title

IEEE Photovoltaic Specialists Conference (PVSC)

Conference Dates

June 11-16, 2023

Conference Location

San Juan, PR, US

Conference Title

50th IEEE PVSC

Pub Type

Conferences

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Citation

Neupane, G. , Hamadani, B. , Albin, D. , Duenow, J. , Reese, M. and Thon, S. (2023), Intra-grain local luminescence properties of CdSe0.1Te0.9 Thin Films, IEEE Photovoltaic Specialists Conference (PVSC), San Juan, PR, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=936770 (Accessed November 23, 2024)