Low carrier density epitaxial graphene devices on SiC

Published

June 1, 2014

Author(s)

Yanfei Yang, Lung-I Huang, Yasuhiro Fukuyama, Fan-Hung Liu, Mariano Real, Paola Barbara, Chi-Te Liang, David B. Newell, Randolph Elmquist

Abstract

Monolayer epitaxial graphene grown on a hexagonal silicon carbide (SiC) substrate is typically found to be heavily n-doped (10e13 cm-2) and in most devices made with the as-grown epitaxial graphene the quantized Hall resistance plateau with Landau level filling factor nu=2 occurs at extremely high magnetic fields. We demonstrate a simple and clean fabrication process that produces high-quality devices based on epitaxial graphene with carrier densities in the range of 10e1010e11 cm-2 and highly developed nu=2 quantized Hall resistance plateaus for magnetic fields of less than 2 T. The low carrier density is attributed to p-type molecular doping by HNO3, and normal n-type characteristics can be restored by annealing the samples in Ar at temperatures as low as 175 °C.

Citation

Small

Volume

11

Issue

1

Pub Type

Journals

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Keywords

Graphene, quantum Hall effect, nanotechnology, molecular doping

Citation

Yang, Y. , Huang, L. , Fukuyama, Y. , Liu, F. , Real, M. , Barbara, P. , Liang, C. , Newell, D. and Elmquist, R. (2014), Low carrier density epitaxial graphene devices on SiC, Small, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=915601 (Accessed December 22, 2024)