Metal-based Room-temperature Operating Single Electron Devices Using Scanning Probe Oxidation

Published

January 30, 1998

Author(s)

K Matsumoto, Y Gotoh, T Maeda, John A. Dagata, J S. Harris

Abstract

Coulomb oscillation was clearly observed at room temperature in the single electron transistor fabricated by atomic force microscopy (AFM) nano-oxidation process. In order to obtain a clear Coulomb oscillation at room temperature, new and improved fabrication processes and measurement systems such as a pulse-mode AFM nano-oxidation process and a triaxial active feedback measurement system are introduced. The Coulomb oscillation peaks appear with the period of 1.9 V at the drain bias conditions of 0.25 V and 0.3 V. The current modulation rate ranges from 20% to 30%.

Citation

Japanese Journal of Applied Physics

Volume

38(1,1B)

Pub Type

Journals

Keywords

AFM, Coulomb oscillation, nano-oxidation process, single electron transistor

Citation

Matsumoto, K. , Gotoh, Y. , Maeda, T. , Dagata, J. and Harris, J. (1998), Metal-based Room-temperature Operating Single Electron Devices Using Scanning Probe Oxidation, Japanese Journal of Applied Physics (Accessed July 25, 2024)