Roshko, A.
, Chen, Y.
and Hickernell, R.
(2002),
NIST study accelerates understanding of oxidation mechanisms important to laser manufacturers, Journal of Research (NIST JRES), National Institute of Standards and Technology, Gaithersburg, MD, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30109
(Accessed December 3, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
NIST study accelerates understanding of oxidation mechanisms important to laser manufacturers
Published
Author(s)
, Y Chen,
Abstract
Researchers at NIST have shown that the oxidation kinetics of AlgaAs are independent of semiconductor growth method and edge preparation conditions. They found that the oxidation rate did not depend on whether the initial layers were grown by molecular beam epitaxy or metalorganic chemical vapor deposition.Citation
Journal of Research (NIST JRES) -
Volume
107
Issue
3
NIST Pub Series
Pub Type
NIST Pubs
Download Paper
Keywords
AlgaAs-oxidation, MBE, MOCVD, native oxide, AlgaAs-oxide
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created May 1, 2002, Updated January 27, 2020