Buckley, S.
, Tait, A.
, Moody, G.
, Silverman, K.
, Nam, S.
, Mirin, R.
, Shainline, J.
, Olson, S.
, Hermann, J.
and Papa, S.
(2020),
Optimization of photoluminescence from W centers in silicon-on-insulator for waveguide-coupled sources, Journal of Applied Physics, [online], https://doi.org/10.1364/OE.386450
(Accessed November 21, 2024)
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Optimization of photoluminescence from W centers in silicon-on-insulator for waveguide-coupled sources
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Author(s)
, , , , , , , Stephen Olson, Joshua Hermann, Satyvalu Papa Rao
Abstract
W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218\textmu m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diode sources. Here we optimize the implant energy, fluence and anneal conditions for the substrate used for waveguide-integrated devices, and observe near two orders of magnitude improvement in photoluminescence intensity relative to our previous work. We further show that such light sources are compatible with a 300 mm foundry process by demonstrating photoluminescence of similar intensity from 300-mm SOI wafers. We demonstrate uniformity of luminescence across the wafer that is within the measurement error.Citation
Journal of Applied Physics
Pub Type
Journals
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Keywords
LEDs, semiconductor defects, neuromorphic
Citation
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Created May 12, 2020, Updated October 7, 2020