Campbell, J.
, Qin, J.
, Cheung, K.
, Yu, L.
, Suehle, J.
, Oates, A.
and Sheng, K.
(2009),
Random Telegraph Noise in Highly Scaled nMOSFETs, 2009 IEEE International Reliability Physics Symposium, Montreal, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=901584
(Accessed December 21, 2024)
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Random Telegraph Noise in Highly Scaled nMOSFETs
Published
Author(s)
, , , , , A Oates, Kuang Sheng
Abstract
Recently 1/f and random telegraph noise (RTN) studies have been used to infer information about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a noise framework which involves charge exchange between the inversion layer and the bulk dielectric defects via elastic tunneling. In this study we extracted the characteristic capture and emission time constants from RTN on highly-scaled nMOSFETs, and show that it is inconsistent with elastic tunneling picture dictated by the physical thickness of the gate dielectric (1.4 nm). Consequently, our results suggest that an alternative model is required and that a large body of the recent RTN and 1/f noise literature very likely needs to be re-interpreted.Proceedings Title
2009 IEEE International Reliability Physics Symposium
Conference Dates
April 26-30, 2009
Conference Location
Montreal, CA
Pub Type
Conferences
Download Paper
Keywords
Random Telegraph Noise, 1/f noise, elastic tunneling
Citation
Issues
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Created April 26, 2009, Updated February 19, 2017