Random Telegraph Noise in Highly Scaled nMOSFETs

Published

April 26, 2009

Author(s)

Jason P. Campbell, Jin Qin, Kin P. Cheung, Liangchun (. Yu, John S. Suehle, A Oates, Kuang Sheng

Abstract

Recently 1/f and random telegraph noise (RTN) studies have been used to infer information about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a noise framework which involves charge exchange between the inversion layer and the bulk dielectric defects via elastic tunneling. In this study we extracted the characteristic capture and emission time constants from RTN on highly-scaled nMOSFETs, and show that it is inconsistent with elastic tunneling picture dictated by the physical thickness of the gate dielectric (1.4 nm). Consequently, our results suggest that an alternative model is required and that a large body of the recent RTN and 1/f noise literature very likely needs to be re-interpreted.

Proceedings Title

2009 IEEE International Reliability Physics Symposium

Conference Dates

April 26-30, 2009

Conference Location

Montreal, CA

Pub Type

Conferences

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Keywords

Random Telegraph Noise, 1/f noise, elastic tunneling

Citation

Campbell, J. , Qin, J. , Cheung, K. , Yu, L. , Suehle, J. , Oates, A. and Sheng, K. (2009), Random Telegraph Noise in Highly Scaled nMOSFETs, 2009 IEEE International Reliability Physics Symposium, Montreal, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=901584 (Accessed October 8, 2025)