Hite, D.
, Tang, S.
and Sprunger, P.
(2003),
Reactive epitaxy of beryllium on Si(1 1 1)-(7 x 7), Chemical Physics Letters
(Accessed October 31, 2024)
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Reactive epitaxy of beryllium on Si(1 1 1)-(7 x 7)
Published
Author(s)
, Shu-Jung Tang, Phillip T. Sprunger
Abstract
Scanning tunneling microscopy (STM) and photoelectron spectroscopy (PES) have been used to investigate the nucleation, growth, and structure of beryllium on Si(1 1 1)-(7 x 7). STM indicates that a chemical reaction occurs at temperatures as low as 120 K, resulting in a nano-clustered morphology, presumed to be composed of a beryllium silicide compound. Upon annealing to higher temperatures, PES data indicate that beryllium diffuses into the selvage region. High temperature annealing (1175 K) results in the formation of a universal ring cluster structure suggesting a Be?Si bond length less than 2.5 A, in agreement with previous calculations regarding hypothetical Be2Si.Citation
Chemical Physics Letters
Volume
367
Pub Type
Journals
Keywords
growth, silicide formation, surface
Citation
Issues
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Created December 31, 2002, Updated October 12, 2021