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PUBLICATIONS

Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays

Published

Author(s)

Pragya R. Shrestha, xiao Lyu, Mengwei Si, Jason P. Campbell, Kin P. Cheung, Peide Ye

Abstract

The polarization switching speed of ferroelectric (FE) hafnium zirconium oxide (HZO) is studied with the device size down to sub-μm in lateral dimension. Ultrafast measurement of transient switching current on metal-ferroelectric-metal (MFM) device with a crossbar array or a single crossbar structure is performed to analyze the switching dynamics. A record fast polarization switching of 360 ps is achieved for 15 nm thick HZO with 0.1 μm2 crossbar array device structure. The observed record switching speed is found to be limited by domain wall propagation speed in the nucleation limited switching process. It is further verified after significant reduction of RC delay of the devices and the implementation of crossbar array structure.
Proceedings Title
IEEE Silicon Nanoelectronics Workshop
Conference Dates
June 13-14, 2020
Conference Location
Honolulu, HI
Pub Type
Conferences

Keywords

Ferroelectric, ultra-fast switching, crossbar, FeRAM, FeFET
Semiconductors

Citation

Shrestha, P. , Lyu, X. , Si, M. , Campbell, J. , Cheung, K. and Ye, P. (2020), Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays, IEEE Silicon Nanoelectronics Workshop, Honolulu, HI (Accessed December 11, 2024)

Issues

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Created July 1, 2020, Updated July 6, 2020