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Search Publications

NIST Authors in Bold

Displaying 1476 - 1500 of 2174

Unbiased Estimation of Linewidth Roughness

May 1, 2005
Author(s)
John S. Villarrubia, B Bunday
Line width roughness (LWR) is usually estimated simply as three standard deviations of the line width. The effect of image noise upon this metric includes a positive nonrandom component. The metric is therefore subject to a bias or ?systematic error? that

The Programs of the Manufacturing Engineering Laboratory 2005

April 8, 2005
Author(s)
Lisa J. Fronczek, Bessmarie A. Young
The National Institute of Standards and Technology s Manufacturing Engineering Laboratory (MEL) strengthens the U.S. economy and improves the quality of life by working with the U.S. manufacturing industry to develop and apply infrastructural technology

Photomask Feature Metrology

April 7, 2005
Author(s)
James E. Potzick
This chapter discusses some general issues with regard to measurement of the size and placement of the features on a photomask.
Since all linewidth and placement measurements derive from the location of a feature's edges, the Chapter starts with a

Comparison of SEM and HRTEM CD-Measurements Extracted From Monocrystalline Tes-Structures Having Feature Linewidths From 40 nm to 240 nm

April 4, 2005
Author(s)
W Tan, Robert Allen, Michael W. Cresswell, Christine E. Murabito, B C. Park, Ronald G. Dixson, William F. Guthrie
CD measurements have been extracted from SEM and HRTEM images of the same set of monocrystalline silicon features having linewidths between 40 and 200 nm. The silicon features are incorporated into a new test structure which has been designed to facilitate

Magnetic Method to Characterize the Current Densities in a Breaker Arc

April 1, 2005
Author(s)
Nadia Machkour-Deshayes
The purpose of this research was to use magnetic induction measurements from a low voltage electric arc, to reconstruct the arc''s current density. The measurements were made using Hall effect sensors, which were placed close to, but outside the breaking

Optical Flatness Metrology for 300 mm Silicon Wafers

April 1, 2005
Author(s)
Ulf Griesmann, Quandou (. Wang, T D. Raymond
At the National Institute of Standards and Technology (NIST), we are developing two interferometric methods for measuring the thickness variation and flatness of free-standing and chucked silicon wafers with diameters up to 300mm. The eXtremely accurate

Refractometry Using a Helium Standard

April 1, 2005
Author(s)
Jack A. Stone Jr., Alois Stejskal
The refractive index of helium at atmospheric pressure can be calculated from first principles with a very low uncertainty, on the order of 10^-10. Furthermore, the low refractive index of helium puts minimal demands on the pressure and temperature

Scanning Electron Microscope Dimensional Metrology Using a Model-Based Library

April 1, 2005
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
The semiconductor electronics industry places significant demands upon secondary electron imaging to obtain dimensional measurements that are used for process control or failure analysis. Tolerances for measurement uncertainty and repeatability are smaller

UML 2 Activity and Action Models, Part 6: Structured Activities

April 1, 2005
Author(s)
Conrad E. Bock
This is the sixth in a series introducing the activity model in the Unified Modeling Language, version 2 (UML 2), and how it integrates with the action model [1]. The first article gives an overview of activities and actions [2], while the next four cover

Influence of Focus Variation on Linewidth Measurements

March 3, 2005
Author(s)
M Tanaka, John S. Villarrubia, Andras Vladar
The influence of spatial resolution on line width measurements in the critical dimension scanning electron microscope (CD-SEM) was investigated experimentally. Measurement bias variation and measurement repeatabilities of four edge detection algorithms

2D and 3D Surface Texture Comparisons Using Autocorrelation Functions

January 1, 2005
Author(s)
Jun-Feng Song, Li Ma, Eric P. Whitenton, Theodore V. Vorburger
Autocorrelation and cross-correlation functions are proposed for 2D and 3D surface texture comparisons. At the maximum correlaton point of the two correlated surface textrues, there is a peak shown at the cross-correaltion curve. It is proposed to generate

2D and 3D Surface Texture Comparisons Using Autocorrelation Functions

January 1, 2005
Author(s)
Jun-Feng Song, Li Ma, Eric P. Whitenton, Theodore V. Vorburger
Autocorrelation and cross-correlation functions are proposed for 2D and 3D surface texture comparisons. At the maximum correlation point of the two correlated surface textures, there is a peak shown at the cross-correlation curve. It is proposed to

Internet-Based Surface Metrology Algorithm Testing System

January 1, 2005
Author(s)
Mark C. Malburg, Jayaraman Raja, Son H. Bui, Thomas Brian Renegar, Bui Son Brian, Theodore V. Vorburger
Software is an integral part of most measurement systems and it is particularly important in roughness measurement and analysis. Evaluation and assessment of measured roughness profiles must be performed in accordance with standards. Different types of

Issues in Line Edge and Linewidth Roughness Metrology

January 1, 2005
Author(s)
John S. Villarrubia
In semiconductor electronics applications, line edge and linewidth roughness are generally measured using a root mean square (RMS) metric. The true value of RMS roughness depends upon the length of edge or line that is measured and the chosen sampling

Line Edge Roughness Metrology Using Atomic Force Microscopes

January 1, 2005
Author(s)
Ndubuisi G. Orji, Theodore V. Vorburger, Joseph Fu, Ronald G. Dixson, C Nguyen, Jayaraman Raja
Line edge roughness measurements using two types of atomic force microscopes and two types of tips are compared. Measurements were made on specially prepared samples with inscribed edge roughness of different amplitudes and wavelengths. The spatial

Linewidth Measurement from a Stitched AFM Image

January 1, 2005
Author(s)
Joseph Fu, Ronald G. Dixson, Ndubuisi G. Orji, Theodore V. Vorburger, C Nguyen
Image stitching is a technique that combines two or more images to form one composite image, which provides a field of view that the originals cannot. It has been widely used in photography, medical imaging, and computer vision and graphics. For such

Measurement Uncertainty, CMMs, and Standards: Today and the Future

January 1, 2005
Author(s)
Steven D. Phillips
Over the past decade modern measurement uncertainty evaluation has evolved from an obscure art practiced at National Measurement Institutes (NMIs) to an increasingly intertwined aspect of industrial metrology. This paper examines the progression of

New Capabilities At NIST In Dimensional Metrology

January 1, 2005
Author(s)
Theodore D. Doiron, Eric S. Stanfield, Bryon S. Faust, John R. Stoup, Mary Abbott
A number of new or revised services in dimensional metrology are presented. Included are: a lower cost, high accuracy calibration for sphere diameter; reduced uncertainty in roundness calibration; a new instrument for measurement of the thermal expansion

Photomask Metrology, Photomask Fabrication Technology

January 1, 2005
Author(s)
Richard M. Silver, Andras Vladar
In this paper we will focus on the different metrology techniques used to measure features on photomasks. In view of the above discussion, we will focus on the importance of accurately measuring features and developing traceability. The metrology
Displaying 1476 - 1500 of 2174
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