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Search Publications by: Carlos R. Beauchamp (Fed)

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Displaying 26 - 48 of 48

In-situ Stress Measurements During Electrodeposition of Au-Ni Alloys

September 10, 2010
Author(s)
Eric Rouya, Gery R. Stafford, Carlos R. Beauchamp, J. A. Floro, R. G. Kelly, Reed L. M., Zangari G.
We investigate the stress evolution in-situ during the potentiostatic electrodeposition of metastable, nanostructured Au-Ni alloy films, and develop a correlation between the alloy nucleation and growth mode, the growth rate, alloy composition and the

Whisker Formation in Pb-Free Surface Finishes

February 2, 2010
Author(s)
Gery R. Stafford, Maureen E. Williams, Jae W. Shin, Kil-Won Moon, William J. Boettinger, Carlos R. Beauchamp
Tin(Sn)-lead(Pb) alloys have been used extensively for surface finishing of electronic components in part because Pb was found to be effective in retarding Sn whisker growth in electrodeposits. Altough whiskers appear to be a local response to the

Three-Dimensionally Structured Thin Film Heterojunction Photovoltaics on Interdigitated Back-Contacts

February 1, 2010
Author(s)
Daniel Josell, Carlos R. Beauchamp, Behrang H. Hamadani, Suyong S. Jung, Jonathan E. Guyer, Abhishek Motayed, Carlos M. Hangarter, Nadine E. Gergel-Hackett, Hua Xu, Nikolai B. Zhitenev
Fabrication and properties of three-dimensionally structured back-contact heterojunction solar cells are described. A variety of devices are explored, all of which were fabricated by electrochemical deposition of a semiconducting material on one of two

Three-Dimensionally Structured CdTe Thin Film Photovoltaic Devices with Self-Aligned Back Contacts: Electrodeposition on Interdigitated Electrodes.

June 25, 2009
Author(s)
Daniel Josell, Carlos R. Beauchamp, Suyong S. Jung, Behrang H. Hamadani, Abhishek Motayed, Lee J. Richter, Maureen E. Williams, John E. Bonevich, Alexander J. Shapiro, Nikolai B. Zhitenev, Thomas P. Moffat
Cadmium-telluride photovoltaic cells were deposited on substrates patterned with two interdigitated electrodes. Deposition involved application of different potentials to the two electrodes in order to obtain a 3-d gradient of film properties within the

400-Fold Reduction in Saturation Field by Interlayering

January 13, 2009
Author(s)
William F. Egelhoff Jr., John E. Bonevich, Philip Pong, John Unguris, Robert D. McMichael, Gery R. Stafford, Carlos R. Beauchamp
The buildup of stress with increasing thickness of magnetic thin films is a common phenomenon that often induces undesirable saturation fields that can convert an otherwise magnetically soft film into a magnetically hard one. We have found that by

Nanotwin formation and its physical properties and effect on reliability of copper interconnects.

May 3, 2008
Author(s)
Di Xu, Vinay Sriram, Vidvuds Ozolins, Jenn-Ming Yang, K. N. Tu, Gery R. Stafford, Carlos R. Beauchamp, Inka Zienert, Holm Geisler, Petra Hofmann, Ehrenfried Zschech
Ultra-fine grained copper with a large amount of nano-scale twin boundaries has high mechanical strength and maintain normal electrical conductivity. The combination of these properties may lead to promising applications in future Si microelectronic

In Situ Stress Measurements During Copper Electrodeposition on (111)-Textured Au

October 1, 2005
Author(s)
Gery R. Stafford, O E. Kongstein, Carlos R. Beauchamp
In situ stress measurements were made during copper electrodeposition onto (111)-textured Au from acidic sulfate electrolyte using the wafer curvature method. In the Cu upd region, the intermediate honeycomb structure where sulfate form an ordered ((surd

Compatibility of Halon Alternatives During Storage

August 21, 1994
Author(s)
Richard G. Gann, Carlos R. Beauchamp, Thomas G. Cleary, J L. Fink, Richard H. Harris Jr., F Horkay, G B. McKenna, Thomas P. Moffat, Marc R. Nyden, Richard D. Peacock, Richard E. Ricker, Mark R. Stoudt, W. K. Waldron
A key facet of the evaluation of new fire suppressants is their behavior under pressure and at elevated temperature in a metal storage container with an elastomer seal. In this study, 13 candidate chemicals have been examines: C2F6, C3F8, C4F10, cyclo-C4F8