June 1, 2002
Author(s)
Kevin J. Coakley, Huaiyu H. Chen-Mayer, George P. Lamaze, David S. Simons, P E. Thompson
We measure the boron concentration versus depth profile within a silicon sample with four delta-doped planes by secondary ion mass spectrometry. In a neutron depth profiling (NDP) experiment, we illuminate the sample with a neutron beam. Nuclear reactions