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Search Publications by: Monica D. Edelstein (Fed)

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Displaying 26 - 42 of 42

Recent Developments in Producing Test-structures for Use as Critical Dimension Reference Materials

March 1, 2004
Author(s)
Richard A. Allen, Ravi I. Patel, Michael W. Cresswell, Christine E. Murabito, Brandon Park, Monica D. Edelstein, Loren W. Linholm
NIST is developing Single-Crystal Critical-Dimension Reference Materials (SCCDRM) which address the need of the semiconductor and semiconductor equipment industries for a well-characterized artifact to serve as the basis for comparing the performance of

Superconformal Electrodeposition of Silver in Submicrometer Features

August 1, 2002
Author(s)
Thomas P. Moffat, B C. Baker, Daniel Wheeler, John E. Bonevich, Monica D. Edelstein, D R Kelly, L Gan, Gery R. Stafford, P J. Chen, William F. Egelhoff Jr., Daniel Josell
The generality of the curvature enhanced accelerator coverage (CEAC) model of superconformal electrodeposition is demonstrated through application to superconformal filling of fine trenches during silver deposition from selenium-catalyzed silver cyanide

Challenges of High-[kappa] Gate Dielectrics for Future MOS Devices

May 13, 2001
Author(s)
John S. Suehle, Eric M. Vogel, Monica D. Edelstein, Curt A. Richter, Nhan Van Nguyen, Igor Levin, Debra Kaiser, Hanchang F. Wu, J B. Bernstein
As the feature sizes of complementary metal-oxide-semiconductor (CMOS) devices are scaled downward, the gate dielectric thickness must also decrease to maintain a value of capacitance to reduce short-channel effects and to keep device drive current at an

In Situ Diffuse Reflectance Spectroscopy for Measurement and Control of III-V Molecular Beam Epitaxy

March 17, 2000
Author(s)
Jonathan E. Guyer, W. F. Tseng, W. R. Thurber, Eric M. Vogel, Monica D. Edelstein, Donald A. Gajewski, Joseph G. Pellegrino
We report the use of diffuse reflectance spectroscopy for active, closed-loop control of substrate temperature during the growth of a modulation doped heterostructure. Measurement and control of substrate temperature is a common difficulty for molecular

Electrical Detection of Defects in SIMOX Buried Oxides: Pipes and Precipitates

October 5, 1998
Author(s)
Peter Roitman, Monica D. Edelstein, S. J. Krause
Two defect types have been identified in the buried oxide of low dose SIMOX: conductive silicon paths through the buried oxide (pipes) and silicon precipitates in the buried oxide. Both types are caused by the same general mechanism; the tendency of the Si