April 1, 1989
Author(s)
John G. Gillen, J M. Phelps, Randall W. Nelson, Peter Williams, Steven M. Hues
Thin multilayer samples of Si/Ge, with individual layer thicknesses of 4-33 nm, have been analyzed by secondary ion mass spectrometry (SIMS) using Ar+, O2+ and Cs+ primary ion beams. Bombardment with both Ar+ and O2+ produced positive secondary ion depth