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Search Publications by: Joseph J. Kopanski (Assoc)

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Displaying 1 - 25 of 210

Towards the Physical Reliability of 3D-Integrated Systems: Broadband Dielectric Spectroscopic (BDS) Studies of Material Evolution and Reliability in Integrated Systems

September 30, 2022
Author(s)
Papa Amoah, Joseph J. Kopanski, Yaw S. Obeng, Christopher Sunday, Chukwudi Okoro, Lin You, Dmirty Veksler
In this paper, we present an overview of our current research focus in developing non-destructive metrology for monitoring reliability issues in 3D-integrated electronic systems. We introduce a suite of non-destructive metrologies that can serve as early

Deterministic Tagging Technology for Device Authentication

September 16, 2021
Author(s)
Jungjoon Ahn, Joseph J. Kopanski, Yaw S. Obeng, Jihong Kim
This paper discusses the development of a rapid, large-scale integration of deterministic dopant placement technique for encoding information in physical structures at the nanoscale. The doped structures inherit identical and customizable radiofrequency

Electric Field Gradient Reference Material for Scanning Probe Microscopy

March 31, 2019
Author(s)
Joseph Kopanski, Lin You
Any eSPM measurement of a spatially varying electric field at the surface of a sample has a large uncertainty due to the unknown details of the tip shape near the surface. We have designed an electric field gradient reference sample to provide an

Probe assisted localized doping of aluminum into silicon substrates

February 20, 2019
Author(s)
Jungjoon Ahn, Santiago D. Solares, Lin You, Hanaul Noh, Joseph Kopanski, Yaw S. Obeng
In this paper, we demonstrate AFM probe assisted deterministic doping (PADD) of Al into an n- type Si (100) wafer, to generate nanoscale counter-doped junctions with a few nanometers depth from Si surface. The local electrical potential changes resulting

Method for Determining the Electrical Shape of a Scanning Probe Microscope Tip

April 2, 2018
Author(s)
Joseph J. Kopanski, Malcolm Regan, Lin You
Knowledge of the actual electrical tip shape can be used to better understand electric field gradients measured with eSPMs and to determine the suitability of various types of conducting SPM tips for electrical measurements. For co-axially shielded tips

Remote Bias Induced Electrostatic Force Microscopy for Subsurface Imaging

March 5, 2018
Author(s)
Joseph J. Kopanski, Lin You, Yaw S. Obeng
Contrast in electrostatic force microscopy (EFM) depends on the electrostatic force between the tip and sample. In the related technique, scanning Kelvin force microscopy (SKFM), contrast arises from the force due to the capacitance gradient with tip-to

Rapid and Accurate C-V Measurements

October 1, 2016
Author(s)
Jihong Kim, Pragya Shrestha, Jason Campbell, Jason Ryan, David M. Nminibapiel, Joseph Kopanski, Kin P. Cheung
We report a new technique for the rapid measurement of full capacitance-voltage (C-V) characteristic curves. The displacement current from a 100 MHz applied sine-wave, which swings from accumulation to strong inversion, is digitized directly using an

Characterization of Buried Interfaces with Scanning Probe Microscopes

May 19, 2016
Author(s)
Joseph J. Kopanski, Lin You, Jungjoon Ahn, Yaw S. Obeng
Scanning probe microscopes (SPMs) have some capability to image sub-surface structure, including the details of buried interfaces. This paper describes the theoretical and practical basis for obtaining information about shallow buried interfaces

Dielectric Spectroscopic Detection of Early Failures in 3-D Integrated Circuits

October 11, 2015
Author(s)
Yaw S. Obeng, Chukwudi A. Okoro, Jungjoon Ahn, Lin You, Joseph J. Kopanski
The commercial introduction of three dimensional integrated circuits (3D-ICs) has been hindered by reliability challenges, such as stress related failures, resistivity changes, and unexplained early failures. In this paper, we discuss a new RF-based

Nanoelectronic Structural Information with Scanning Probe Microscopes

June 14, 2015
Author(s)
Joseph J. Kopanski, Lin You, Jungjoon Ahn, Yaw S. Obeng
Scanning probe microscope (SPM) based methods to obtain subsurface structural information about nano-structured materials are described. A test structure chip containing structures to produce various surface electric field gradients, spatially varying

Electromagnetic Field Test Structure Chip for Back End of the Line Metrology

March 23, 2015
Author(s)
Lin You, Jungjoon Ahn, Emily Hitz, Jonathon Michelson, Yaw S. Obeng, Joseph J. Kopanski
A test chip to produce known and controllable gradients of surface potential and magnetic field at the chip surface and suitable for imaging with various types of scanning probe microscopes is presented. The purpose of the test chip is to evaluate various

Influence of Metal?MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts

December 16, 2014
Author(s)
Hui H. Yuan, Guangjun Cheng, Lin You, Haitao Li, Hao Zhu, Wei Li, Joseph J. Kopanski, Yaw S. Obeng, Angela R. Hight Walker, David J. Gundlach, Curt A. Richter, D. E. Ioannou, Qiliang Li
In this work, we present a study of enhancing MoS2 transistor performance by using proper metal contact. We found that the on-state current of MoS2 field-effect transistors with 30 nm Au/ 30 nm Ag contacts is enhanced more than 60 times and the

Broad-Band Microwave-Based Metrology Platform Development: Demonstration of In-Situ Failure Mode Diagnostic Capabilities for Integrated Circuit Reliability Analyses

November 7, 2014
Author(s)
Lin You, Chukwudi A. Okoro, Jungjoon Ahn, Joseph Kopanski, Yaw S. Obeng, Rhonda R. Franklin
In this paper, we discuss the use of broadband high frequency electromagnetic waves (RF) to non- destructively identify, classify and characterize performance-limiting defects in emerging nanoelectronic devices. As an illustration, the impact of thermal

Scanning Probe Microscopes for Subsurface Imaging

May 11, 2014
Author(s)
Joseph J. Kopanski, Lin You, Jungjoon Ahn, Emily Hitz, Yaw S. Obeng
Scanning probe microscopes (SPMs) have some ability to image sub-surface structures. This paper describes the theoretical and practical basis for imaging metal lines buried beneath insulating layers and for imaging insulating regions or voids within metal