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Displaying 1 - 25 of 192

Tailoring the High-K Gate Dielectric/Sillicon Interface for CMOS Applications

October 12, 2021
Author(s)
Y S. Lin, R Puthenkovilakam, J P. Chang, C P. Bouldin, Igor Levin, Nhan Van Nguyen, Y Sun, P Pianetta, T Conard, W Vandervorst, V Venturo, S Selbrede
The interfacial properties, thermal stabilities, and the electrical characteristics of ZrO 2/ Si and ZrO 2/SiO 2/Si were investigated and the interfacial layer of as-deposited ZrO 2 on silicon is likely to be ZrSi xO y. The ZrO 2/ZrSi xO y/Si is

Unraveling the compositional heterogeneity and carrier dynamics of alkali cation doped 3D/2D perovskites with improved stability

December 11, 2020
Author(s)
Ming Chun Tang, Siyuan Zhang, Nhan V. Nguyen, Edwin J. Heilweil, Christina A. Hacker, Timothy J. Magnanelli, Thomas D. Anthopoulos
Preventing the degradation of hybrid perovskite by humid air remains a challenge for their future commercial utilization. 3D/2D perovskites with hierarchical architecture have attracted significant attention due to their promising power conversion

Role of alkali-metal cations in electronic structure and halide segregation of hybrid perovskites

July 1, 2020
Author(s)
Siyuan Zhang, Ming Chun Tang, Yuanyuan Fan, Ruipeng Li, Nhan V. Nguyen, Kui Zhao, Thomas D. Anthopoulos, Christina A. Hacker
Triple-cation hybrid perovskites with mixed-halide have become one of the most dominant composition due to superior photovoltaic performance and stability. In this study, we systematically investigate the incorporation of cesium (Cs+) and potassium (K+) at

Efficient hybrid mixed-ion perovskite photovoltaics: in situ diagnostics of the roles of cesium and potassium alkali cation addition

June 19, 2020
Author(s)
Ming Chun Tang, Yuanyuan Fan, Dounya Barrit, Ruipeng Li, Hoang X. Dang, Siyuan Zhang, Timothy J. Magnanelli, Nhan V. Nguyen, Edwin J. Heilweil, Christina A. Hacker, Detlet-M Smilgies, Kui Zhao, Aram Amassian, Thomas D. Anthopoulos
Perovskite photovoltaics have made extraordinary progress in efficiency and stability in the past few years owing to process and formulation developments like antisolvent drip and mixed-cation mixed-halide compositions. Perovskite solar cells performance

Dielectric properties of Nb_x}W_1-x}Se_2} alloys

December 16, 2019
Author(s)
Albert Rigosi, Heather M. Hill, Sergiy Krylyuk, Nhan V. Nguyen, Angela Hight Walker, Albert Davydov, David Newell
The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work

Computational screening of high-performance optoelectronic materials using OptB88vdW and TB-mBJ formalisms

May 8, 2018
Author(s)
Kamal Choudhary, Qin Zhang, Sugata Chowdhury, Nhan V. Nguyen, Zachary T. Trautt, Marcus W. Newrock, Faical Y. Congo, Andrew C. Reid, Francesca M. Tavazza
We perform high-throughput density functional theory (DFT) calculations for optoelectronic properties (electronic bandgap and frequency dependent dielectric function) using the OptB88vdW functional (OPT) and the Tran-Blaha modified Becke Johnson potential

Band offset and electron affinity of MBE-grown SnSe2

January 25, 2018
Author(s)
Qin Zhang, Mingda Li, Edward Lochocki, Suresh Vishwanath, Xinyu Liu, Rusen Yan, Huai-Hsun Lien, Malgorzata Dobrowolska, Jacek Furdyna, Kyle M. Shen, Guangjun Cheng, Angela R. Hight Walker, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
SnSe2 is currently considered a potential 2D material that can form a near-broken gap heterojunction in a tunnel field-effect transistor (TFET) due to its conceivable large electron affinity, which is experimentally confirmed in this letter. With the

Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene

December 1, 2017
Author(s)
Albert F. Rigosi, Heather M. Hill, Nicholas R. Glavin, Sujitra J. Pookpanratana, Yanfei Yang, Alexander G. Boosalis, Jiuning Hu, Anthony Rice, Andrew A. Allerman, Nhan V. Nguyen, Christina A. Hacker, Randolph E. Elmquist, Angela R. Hight Walker, David B. Newell
Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter- scale areas and consequently, the large scale single crystal can