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Displaying 126 - 150 of 192

Amorphous to Tetragonal Transition in Ultrathin Zirconia Films: Effect on the Electronic and Dielectric Properties

September 1, 2005
Author(s)
Safak Sayan, Mark Croft, Nhan Van Nguyen, Tom Emge, Evgeni Gusev, Hyunjung G. Kim, James R. Ehrstein, Paul McIntyre, Eric Garfunkel
As medium-high permittivity dielectrics approach use in MOSFET production, an atomic level understanding of their permittivity and the capacitance of structures made from them are being rigorously examined. In this note, the issue of crystal structure in

Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy

May 9, 2005
Author(s)
Nhan Van Nguyen, James E. Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel
The crystalline quality of bonded Silicon-On-Insulator (SOI) wafers were examined by spectroscopic ellipsometry and Raman spectroscopy. Both techniques detect slight structural defects in the SOI layer. If a pure crystalline silicon dielectric function is

Crystalline Quality of Bonded Silicon-On-Insulator Characterized by Spectroscopic Ellipsometry and Raman Spectroscopy

October 4, 2004
Author(s)
Nhan Van Nguyen, James E. Maslar, Junghyeun Kim, Jin-Ping Han, Jin-Won Park, Deane Chandler-Horowitz, Eric M. Vogel
The crystalline quality of Silicon-On-Insulator fabricated by a wafer bonding technique was examined by spectroscopic ellipsometry and Raman spectroscopy. The detailed modeling of the experimental ellipsometric data yields information about structural

Critical Review of the Current Status of Thickness Measurements for Ultrathin SiO2 on Si, Part V: Results of a CCQM Pilot Study

October 1, 2004
Author(s)
M P. Seah, S J. Spencer, F Bensebaa, I Vickridge, H Danzebrink, Michael Krumrey, T Gross, W Oesterle, E Wendler, B Rheinlander, Yasushi Azuma, I Kojima, N Suzuki, M Suzuki, Shigeo Tanuma, D W. Moon, Hansuek Lee, H Cho, H Y. Chen, A T. Wee, T Osipowicz, J S. Pan, W A. Jordaan, R Hauert, U Klotz, C van der marel, M Verheijen, Y Tamminga, C Jeynes, P Bailey, S Biswas, U Falke, Nhan Van Nguyen, Deane Chandler-Horowitz, James R. Ehrstein, D Muller, Joseph Dura

Comparative Thickness Measurements of SiO 2 /Si Films for Thickness Less than 10 nm

January 1, 2004
Author(s)
Terrence J. Jach, Joseph A. Dura, Nhan V. Nguyen, J R. Swider, G Cappello, Curt A. Richter
We report on a comparative measurement of SiO 2/Si dielectric film thickness (t < 10 nm) using grazing incidence x-ray photoelectron spectroscopy, neutron reflectometry, and spectroscopic ellipsometry. Samples with nominal thicknesses of 3 nm to 6 nm were

Ultra-thin SiO 2 on Si, Part V: Results of a CCQM Pilot Study of Thickness Measurements

December 1, 2003
Author(s)
M P. Seah, S J. Spencer, F Bensebaa, I Vickridge, H Danzebrink, Michael Krumrey, T Gross, W Oesterle, E Wendler, B Rheinlander, Yasushi Azuma, I Kojima, N Suzuki, M Suzuki, Shigeo Tanuma, D W. Moon, Hansuek Lee, H Cho, H Y. Chen, A T. Wee, T Osipowicz, J S. Pan, W A. Jordaan, R Hauert, U Klotz, C van der marel, M Verheijen, Y Tamminga, C Jeynes, P Bailey, S Biswas, U Falke, Nhan Van Nguyen, Deane Chandler-Horowitz, James R. Ehrstein, D Muller, Joseph Dura

Interfacial Properties of ZrO 2 on Silicon

May 15, 2003
Author(s)
Y S. Lin, R Puthenkovilakam, J Chang, Charles E. Bouldin, Igor Levin, Nhan Van Nguyen, James R. Ehrstein, Ying Sun, P Pianetta, T Conard, Wilfried Vandervorst, V Venturo, S Selbrede

Challenges of High-[kappa] Gate Dielectrics for Future MOS Devices

May 13, 2001
Author(s)
John S. Suehle, Eric M. Vogel, Monica D. Edelstein, Curt A. Richter, Nhan Van Nguyen, Igor Levin, Debra Kaiser, Hanchang F. Wu, J B. Bernstein
As the feature sizes of complementary metal-oxide-semiconductor (CMOS) devices are scaled downward, the gate dielectric thickness must also decrease to maintain a value of capacitance to reduce short-channel effects and to keep device drive current at an