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Search Publications by: David S Simons (Assoc)

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Displaying 26 - 50 of 148

Enriching 28Si beyond 99.9998 % for semiconductor quantum computing

August 5, 2014
Author(s)
Kevin J. Dwyer, Joshua M. Pomeroy, David S. Simons, June W. Lau, Kristen L. Steffens
Using a laboratory-scale apparatus, we enrich 28Si and produce material with 40 times less residual 29Si than previously reported. Starting from natural abundance silane gas, we offer an alternative to industrial gas centrifuges for providing materials

99.996% 12C films enriched and deposited in situ

June 28, 2013
Author(s)
Kevin J. Dwyer, Joshua M. Pomeroy, David S. Simons
A mass selected ion beam system is used to isotopically enrich and deposit thin films, which are measured to be 99.9961(4)% 12C. In solid state quantum information, isotopic enrichment of materials has allowed significant improvements in the coherence time

Characterization of SiGe Films for use as a National Institute of Standards and Technology (NIST) Microanalysis Reference material (RM 8905)

February 1, 2010
Author(s)
Ryna B. Marinenko, Shirley Turner, David S. Simons, Savelas A. Rabb, Rolf L. Zeisler, Lee L. Yu, Dale E. Newbury, Rick L. Paul, Nicholas W. Ritchie, Stefan D. Leigh, Michael R. Winchester, Lee J. Richter, Douglas C. Meier, Keana C. Scott, D Klinedinst, John A. Small
Bulk SiGe wafers cut from single-crystal boules and two SiGe thick films (4 m and 5 m thick) on Si wafers were evaluated with the electron probe microanalyzer for the extent of heterogeneity and composition for use as reference materials needed by the

Phosphorus Doping of Silicon at Substrate Temperatures Above 600 degC

October 22, 2009
Author(s)
P.E. Thompson, G.G. Jernigan, David S. Simons, P. Chi, B.T. Jonker, O.M.J. van 't Erve
P doping of Si during growth by molecular beam epitaxy (MBE) has been investigated in the temperature regime 700 oC to 870 oC. By designing a growth sequence that fully accounts for the P deposited in a delta-doped layer, and then tracks the P as it

Electron Microprobe Characterization of Si-Ge Alloys and Films for Use as Microanalysis Reference Materials

October 16, 2008
Author(s)
Ryna B. Marinenko, Shirley Turner, Dale E. Newbury, Robert L. Myklebust, Lee L. Yu, Rolf L. Zeisler, David S. Simons, John A. Small
Bulk SiGe wafers cut from single-crystal boules and SiGe thick films on Si wafers were evaluated with the electron probe microanalyzer for the extent of heterogeneity and composition for use as reference standards needed by the microelectronics industry in

Development of Certified Reference Materials of Ion-Implanted Dopants in Silicon for Calibration of Secondary Ion Mass Spectrometers

January 1, 2007
Author(s)
David S. Simons, Robert G. Downing, George P. Lamaze, Richard M. Lindstrom, Robert R. Greenberg, Rick L. Paul, Susannah Schiller, William F. Guthrie
Certified reference materials have been developed for calibration of the concentrations of the most common dopants used in silicon semiconductor technology boron, arsenic, and phosphorus. These materials consist of a single dopant species that is