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Search Publications by: Robert E Vest (Fed)

Displaying 126 - 145 of 145

Absolute Silicon Photodiodes for 160 nm to 254 nm Photons

January 1, 1998

Author(s)

L R. Canfield, Robert E. Vest, R Korde, H Schmidtke, R Desor

Absolute Silicon Photodiodes for 160 nm to 254 nm Photons

January 1, 1998

Author(s)

L R. Canfield, Robert E. Vest, R Korde, H Schmidtke, R Desor

Silicon n-on-p photodiodes with 100% internal efficiency have been studied in the 160 nm to 254 nm range. Preliminary values for the quantum yield of silicon, a fundamantal property, are determined. Using these values, a trap detector for absolute flux

First Solar EUV Irradiances Obtained from SOHO by the SEM,

January 1, 1998

Author(s)

D L. Judge, D R. McMullin, H S. Ogawa, D Hovestadt, B Klecker, M Hilchenbach, E M{omlat}bius, L R. Canfield, Robert E. Vest, R N. Watts, Charles Tarrio, M K{umlat}hne