U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Curt A. Richter (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 51 - 75 of 475

Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors

January 4, 2019
Author(s)
Hyuk-Jae Jang, Emily Bittle, Qin Zhang, Adam Biacchi, Curt A. Richter, David J. Gundlach
Here, we present the electrical detection of singlet fission in tetracene by using a field- effect transistor (FET). Singlet fission is a photo-induced spin-dependent process yielding two triplet excitons from the absorption of a single photon. , In this

Magnetotransport in highly enriched 28Si for quantum information processing devices

November 25, 2018
Author(s)
Aruna N. Ramanayaka, Ke Tang, Joseph Hagmann, Hyun S. Kim, Curt A. Richter, Joshua M. Pomeroy
Elimination of unpaired nuclear spins can result in low error rates for quantum computation; therefore, isotopically enriched 28Si is regarded as an ideal environment for quantum information processing devices. Using mass selected ion beam deposition

Contact and Non-Contact Measurement of Electronic Transport in Individual 2D SnS Colloidal Semiconductor Nanocrystals

September 24, 2018
Author(s)
Adam J. Biacchi, Son T. Le, Brian G. Alberding, Joseph A. Hagmann, Sujitra J. Pookpanratana, Edwin J. Heilweil, Curt A. Richter, Angela R. Hight Walker
Colloidal-based solution syntheses offer a scalable and cost-efficient means of producing 2D nanomaterials in high yield. While much progress has been made towards the controlled and tailorable synthesis of semiconductor nanocrystals in solution, it

Controllable Wide-range n- and p-Doping of Monolayer Group 6 Transition-metal Disulfides and Diselenides

July 30, 2018
Author(s)
Siyuan Zhang, Heather M. Hill, Curt A. Richter, Angela R. Hight Walker, Barlow Stephen, Seth Marder, Christina A. Hacker, Sujitra J. Pookpanratana
Developing processes to controllably dope transition-metal dichalcogenides (TMDs) is critical to achieving commercial integration for optical and electrical applications. In this study, molecular reductants and oxidants are introduced onto a series of

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

July 30, 2018
Author(s)
Aruna N. Ramanayaka, Hyun Soo Kim, Joseph A. Hagmann, Roy E. Murray, Ke Tang, Neil M. Zimmerman, Curt A. Richter, Joshua M. Pomeroy, Frederick Meisenkothen, Huairuo Zhang, Albert Davydov, Leonid A. Bendersky
In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi-layer. The delta layer was fabricated starting from an ultra high vacuum (UHV) flash anneal of

Calibration and impact of bulk trap-assisted tunneling and Shockley-Read-Hall currents in InGaAs tunnel-FETs

September 1, 2017
Author(s)
Quentin Smets, Anne S. Verhulst, Eddy Simoen, David J. Gundlach, Curt A. Richter, Nadine Collaert, Marc Heyns
The tunnel-FET (TFET) is a promising candidate for future low-power logic applications because it enables a sub-60 mV/dec subthreshold swing. However, most experimental TFETs are plagued by unwanted trap-assisted tunneling (TAT) and Shockley-Read-Hall (SRH

Epitaxially-grown self-assembled Bi2Se3/Bi2MnSe4 multilayer heterostructures

August 14, 2017
Author(s)
Joseph A. Hagmann, Xiang Li, Si-Ning Dong, Sergei Rouvimov, Sujitra J. Pookpanratana, Kin Man Yu, Tatyana Orlova, Curt A. Richter, David G. Seiler, Xinyu Liu, Jacek K. Furdyna, Margaret Dobrowolska
Progress in understanding topologically non-trivial systems offers the promise of predicting novel systems that demonstrate the remarkable properties associated with topological systems, such as unidirectional spin-polarized surface current and the

Towards single atom devices for quantum information and metrology: weak localization in embedded phosphorus delta layers in silicon

June 29, 2017
Author(s)
Joseph A. Hagmann, Xiqiao Wang, Pradeep N. Namboodiri, Jonathan E. Wyrick, Roy E. Murray, Michael D. Stewart, Richard M. Silver, Curt A. Richter
The key building block for devices based on the deterministic placement of dopants in silicon is the formation of phosphorus dopant monolayers and the overgrowth of high quality crystalline Si. Lithographically defined dopant delta-layers can be formed

Interacting nanoscale magnetic cluster arrays in molybdenum oxide bronzes

May 26, 2017
Author(s)
Joseph A. Hagmann, Son T. Le, Lynn F. Schneemeyer, Joseph A. Stroscio, Tiglet Besara, Theo Siegrist, Curt A. Richter, David G. Seiler
In this study, we examine several reduced ternary molybdates in the family of rare earth molybdenum bronzes produced by electrochemical synthesis with composition LnMo16O44. These compounds contain an array of electrically isolated but magnetically