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Search Publications by: Curt A. Richter (Fed)

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Displaying 126 - 150 of 239

Flexible Memristors

December 3, 2009
Author(s)
Nadine Gergel-Hackett, Laurie Stephey, Barbara Dunlap, Behrang Hamadani, David J. Gundlach, Curt A. Richter

Thermal Stability of Confined Flip-Chip Laminated w-Functionalized Monolayers

December 3, 2009
Author(s)
Mariona Coll Bau, Curt A. Richter, Christina A. Hacker
We present the results of an IR study of the effect of temperature on the formation of Au-monolayer-Si molecular junctions by using a flip-chip lamination approach. Carboxylic acid-terminated alkanethiols self-assembled on ultrasmooth gold substrate have

Fabrication with Flip-Chip Lamination

November 15, 2009
Author(s)
Mariona Coll Bau, Curt A. Richter, Christina Hacker
Fabrication with Flip-Chip Lamination , Mariona Coll, DR Hines, CA Richter, CA Hacker, Nanotechnology colloquium, Wake Forest University, 11-09.

Fabrication with Flip-Chip Lamination

October 15, 2009
Author(s)
Mariona Coll Bau, Curt A. Richter, Christina Hacker
Fabrication with Flip-Chip Lamination , Mariona Coll, DR Hines, CA Richter, CA Hacker, MRSEC surface physics colloquium, University of Maryland, College Park, 10-09.

Advanced Capacitance Metrology for Nanoelectronic Device Characterization

October 5, 2009
Author(s)
Curt A. Richter, Joseph J. Kopanski, Yicheng Wang, Muhammad Y. Afridi, Xiaoxiao Zhu, D. E. Ioannou, Qiliang Li, Chong Jiang
We designed and fabricated a test chip (consisting of an array of metal-oxide-semiconductor (MOS) capacitors and metal-insulator-metal (MIM) capacitors ranging from 0.3 fF to 1.2 pF) for use in evaluating the performance of new measurement approaches for

Large-Scale Integration of High-Performance Silicon Nanowire Field Effect Transistors

September 16, 2009
Author(s)
Qiliang Li, Xiaoxiao Zhu, Yang Yang, D. E. Ioannou, Hao Xiong, Doowon Kwon, John S. Suehle, Curt A. Richter
In this work we present a CMOS-compatible self-aligning process for the large-scale-integration of high performance nanowire field effect transistors with well-saturated drain currents, steep subthreshold slopes at low drain voltage and a large on / off

Formation of Silicon-Based Molecular Electronic Structures Using Flip-chip Lamination

August 11, 2009
Author(s)
Mariona Coll Bau, Lauren H. Miller, Lee J. Richter, Daniel R. Hines, Curt A. Richter, Christina A. Hacker
The use of organic molecules to impart electrical surface properties has been a subject of intense research not only from a fundamental perspective but for many technological applications. In particular, organic molecules have been proposed as active

Flexible Solution-Processed Memristors

June 3, 2009
Author(s)
Nadine E. Gergel-Hackett, Behrang H. Hamadani, B Dunlap, John S. Suehle, Curt A. Richter, Christina A. Hacker, David J. Gundlach
We have fabricated physically flexible nonvolatile memory devices using inexpensive, room-temperature, solution processing. The behavior of these devices is consistent with that of a memristor device, the missing fourth circuit element theoretically

Ultrasmooth Gold as a Top Metal Electrode for Molecular Electronic Devices

April 7, 2009
Author(s)
Mariona Coll Bau, Christina A. Hacker, Lauren H. Miller, Daniel R. Hines, E. C. Williams, Curt A. Richter
In the emerging area of molecular electronics, fabrication of reliable metallic contacts remains one of the most critical challenges. Nanotransfer printing (nTP) is an attractive low-cost non-destructive technique to provide contact to organic monolayers

Test Chip to Evaluate Measurement Methods for Small Capacitances

March 30, 2009
Author(s)
Joseph J. Kopanski, Muhammad Y. Afridi, Chong Jiang, Curt A. Richter
We designed and fabricated a test chip to help us evaluate the performance of new approaches to measurement of small capacitances (femto-Farads to atto-Farads range). The test chip consists of an array of metal-oxide-semiconductor capacitors, metal

Magnetic Tunnel Junctions with Self-Assembled Molecules

February 5, 2009
Author(s)
Wenyong Wang, Curt A. Richter
Molecular electronic devices with spin-dependent tunneling (SDT) transport behavior offer an innovative and extremely enticing direction towards spin electronics, both from fundamental and technological points of view. In this work, such molecular magnetic

Silicon Nanowire NVM Cell Using High-k Dielectric Charge Storage Layer

December 5, 2008
Author(s)
Xiaoxiao Zhu, Yang Yang, Qiliang Li, D. E. Ioannou, John S. Suehle, Curt A. Richter
Si nanowire (SiNW) channel non-volatile memory (NVM) cells were fabricated by a 'self-alignment' process. First, a layer of thermal SiO2 was grown on a silicon wafer by dry oxidation, and the SiNWs were then grown by chemical vapor deposition in pre

Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors

December 2, 2008
Author(s)
Lucile C. Teague, Behrang H. Hamadani, John E. Anthony, David J. Gundlach, James G. Kushmerick, Sanker Subramanian, Thomas Jackson, Curt A. Richter, Oana Jurchescu
We report scanning Kelvin probe microscopy (SKPM) of electrically biased difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin film transistors. SKPM reveals the relationship between the diF-TESADT film structure and device

Metrology for the Electrical Characterization of Semiconductor Nanowires

November 1, 2008
Author(s)
Curt A. Richter, Hao Xiong, Xiaoxiao Zhu, Wenyong Wang, Vincent M. Stanford, Woong-Ki Hong, Takhee Lee, D. E. Ioannou, Qiliang Li
Nanoelectronic devices based upon self-assembled semiconductor nanowires are excellent research tools for investigating the behavior of structures with sub-lithographic features as well as a promising basis for future information processing technologies

The Integration of Molecular Electronic Devices with Traditional CMOS Technologies

August 28, 2008
Author(s)
Nadine E. Gergel-Hackett, Askia A. Hill, Christina A. Hacker, Curt A. Richter
This work describes the development of hybrid circuits composed of silicon-based molecular electronic devices and traditional CMOS technology. In the development of these circuits, we first fabricated individual CMOS-compatible molecular electronic devices

Molecule induced interface states dominate charge transport in Si-alkyl-metal junctions

August 26, 2008
Author(s)
Lam H. Yu, Nadine E. Gergel-Hackett, Christopher D. Zangmeister, Christina A. Hacker, Curt A. Richter, James G. Kushmerick
Abstract. Semiconductor-molecule-metal junctions consisting of alkanethiol mono- layers self-assembled on both p+ and n¡ type highly doped Si(111)wires contacted with a 10 ¹m Au wire in a crossed-wire geometry are examined. Low temperature transport