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Search Publications by: James E. Maslar (Fed)

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Displaying 1 - 25 of 141

Nanocalorimetry for plasma metrology relevant to semiconductor fabrication

February 4, 2025
Author(s)
John Diulus, Carles Corbella Roca, Feng Yi, David LaVan, Berc Kalanyan, Mark McLean, Lakshmi Ravi Narayan, William Osborn, James Maslar, Andrei Kolmakov
This letter reports on pilot tests of microfabricated nanocalorimeters as a metrology platform for the rapid (sub-100 ms response time) and sensitive detection of neutral radicals generated by reactive cold plasmas, typical in plasma cleaning applications

Comparison of saturator designs for low volatility liquid precursor delivery

April 1, 2023
Author(s)
James E. Maslar, William A. Kimes, Vladimir B. Khromchenko, Brent Sperling, Ravindra Kanjolia
Low volatility precursors are widely utilized in chemical vapor deposition and atomic layer deposition processes. Such precursors are often delivered from one of two common saturator designs: a bubbler or a flow over vessel. Previous reports concerning

Characterization of bubbler performance for low-volatility liquid precursor delivery

June 27, 2019
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling, Ravindra K. Kanjolia
The performance of a bubbler to deliver the low-volatility, liquid cobalt precursor μ2- η2-(tBu- acetylene) dicobalthexacarbonyl (CCTBA) for reduced-pressure chemical vapor deposition and atomic layer deposition processes was characterized. A relatively

In situ infrared spectroscopy during La2O3 ALD using La(iPrCp)3 and H2O

April 26, 2018
Author(s)
Brent A. Sperling, James E. Maslar, Sergei Ivanov
Infrared spectra have been obtained during atomic layer deposition using tris(isopropylcyclopentadienyl)lanthanum, La(iPrCp)3, and water as precursors at 160 °C and 350 °C. Gas-phase spectra of La(iPrCp)3 are additionally obtained for comparison. At low

Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition

July 12, 2017
Author(s)
Berc Kalanyan, William A. Kimes, Ryan Beams, Stephan J. Stranick, Elias J. Garratt, Irina Kalish, Albert Davydov, Ravindra Kanjolia, James E. Maslar
High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely