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Search Publications by: Neil M. Zimmerman (Assoc)

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Displaying 126 - 150 of 161

A Capacitance Standard Based on Counting Electrons

September 10, 1999
Author(s)
Mark W. Keller, Ali L. Eichenberger, John M. Martinis, Neil M. Zimmerman
A capacitance standard based directly on the definition of capacitance was built. Single-electron tunneling devices were used to place N electrons of charge e onto a cryogenic capacitor C, and the resulting voltage change ΔV was measured. Repeated

Behavior of a Charged Two-Level Fluctuator in Al-AlO x -Al Single-Electron Transistor

June 1, 1999
Author(s)
M. Kenyon, J. L. Cobb, A. Amar, D. Song, C. J. Lobb, Neil M. Zimmerman, F. C. Wellstood
We have studied the behavior of a charged two-level fluctuator in an Al-AlO x -Al single-electron transistor (SET) in the normal state over a temperature range from 85 mK to 3K. The fluctuator caused the SET's island charge to shift by δQ0= 0.11 0.025 e

Charge Offset and Noise in SET Transistors

July 1, 1998
Author(s)
Neil M. Zimmerman, J. L. Cobb
We report on several previous and ongoing investigations into the source of, and the amelioration of, the charge offset noise in SET (single-electron tunneling) transistors, made of Al/AlOx/Al tunnel junctions. Previous work has shown that significant time

A Primer on Electrical Units in the Systems International

June 1, 1998
Author(s)
Neil M. Zimmerman
I examine the dissemination of the electrical units, from basic physical laws to commercial calibrations. I discuss the important distinction between realization and representation of units, which refers back to the distinction between SI (Le Systeme

Modulation of the Charge of a Single-Electron Transistor by Distant Defects

September 1, 1997
Author(s)
Neil M. Zimmerman, J. L. Cobb, Alan F. Clark
We have systematically measured two-level fluctuator [TLF] noise in a single-electron tunneling transistor. From the amplitude, duty cycle, and presence of intermediate states, we conclude that there is a cluster of triggered TLF's in this case. The