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Search Publications by: Garnett W. Bryant (Fed)

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Displaying 51 - 75 of 338

From single-particle-like to interaction-mediated plasmonic resonances in graphene nanoantennas

March 4, 2021
Author(s)
Marvin M. Muller, Miriam Kosik, Marta Pelc, Garnett W. Bryant, Andres Ayuela, Carsten Rockstuhl, Karolina Slowik
Plasmonic nanostructures attract tremendous attention as they confine electromagnetic fields well below the diffraction limit while simultaneously sustaining extreme local field enhancements. To fully exploit these properties, the identification and

Energy-Based Plasmonicity Index to Characterize Optical Resonances in Nanostructures

October 27, 2020
Author(s)
Marvin M. Muller, Miriam Kosik, Marta Pelc, Garnett W. Bryant, Andres Ayuela, Carsten Rockstuhl, Karolina Slowik
Resonances sustained by plasmonic nanoparticles provide extreme electric field confinement and enhancement into the deep subwavelength domain for a plethora of applications. Recent progress in nanofabrication made it even possible to tailor the properties

Spin-mechanical coupling of an InAs quantum dot embedded in a mechanical resonator

December 14, 2018
Author(s)
S G. Carter, A S. Bracker, Garnett W. Bryant, M Kim, C S. Kim, M Zalalutdinov, M. K. Yakes, C Czarnocki, J Casara, M Scheibner, D Gammon
We demonstrate strain-induced coupling between a hole spin in a quantum dot and mechanical motion of a cantilever. The optical transitions of quantum dots integrated into GaAs mechanical resonators are measured synchronously with the motion of the driven

Spin decoherence in a two-qubit CPHASE gate: the critical role of tunneling noise

November 27, 2018
Author(s)
Peihao Huang, Neil M. Zimmerman, Garnett W. Bryant
The rapid progress in the manipulation and detection of semiconductor spin qubits enables the experimental demonstration of a high fidelity two-qubit logic gate, which is necessary for universal quantum computing. Here, we study the decoherence of two

Spin relaxation of a donor electron coupled to interface states

November 16, 2018
Author(s)
Peihao Huang, Garnett W. Bryant
An electron spin qubit in a silicon donor atom is a promising candidate for quantum information processing because of its long coherence time. To be sensed with a single-electron transistor, the donor atom is usually located near an interface, where the