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Search Publications by: Ronald G. Dixson (Fed)

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Displaying 126 - 139 of 139

The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calibration Standards With a Calibrated AFM at NIST

January 1, 1998
Author(s)
V W. Tsai, Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, R Koning, Richard M. Silver, E. C. Williams
Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lattice

Conformal Oxides on Si Surfaces

September 15, 1997
Author(s)
V W. Tsai, S. Wang, E. C. Williams, J Schneir, Ronald G. Dixson
The characteristics of the Si-vacuum interface were compared with the characteristics of the oxide-air interface formed following room temperature oxidation for a variety of samples. Scanning tunneling microscopy was used to measure the surface structure

Benchmarking the Length Measurement Capabilities of the National Institute of Standards and Technology

January 1, 1997
Author(s)
Richard M. Silver, J Land, Jack A. Stone Jr., Ronald G. Dixson, Bryon S. Faust, James E. Potzick, Michael T. Postek, et al
A cross-section of measurements from the Precision Engineering Division within the National Institute of Standards and Technology is benchmarked against other leading National Measurement Institutes. We present a variety of length-related calibration

Pitch and Step Height Measurements Using NIST

January 1, 1997
Author(s)
R Koning, Ronald G. Dixson, Joseph Fu, V W. Tsai, Theodore V. Vorburger, Edwin R. Williams, X Wang
The use of the atomic force microscope (AFM) for step height and pitch measurements in industrial applications is rapidly increasing. To compare the results obtained by different instruments and to achieve high accuracy, the scales of an AFM must be

Measurement of a CD and Sidewall Angle Artifact with Two Dimensional CD AFM Metrology

May 1, 1996
Author(s)
Ronald G. Dixson, N. Sullivan, J Schneir, T Mcwaid, V W. Tsai, J Prochazka, M. Young
Despite the widespread acceptance of SEM metrology in semiconductor manufacturing, there is no SEM CD standard currently available. Producing such a standard is challenging because SEM CD measurements are not only a function of the linewidth, but also

Height Calibration of Atomic Force Microscopes Using Silicon Atomic Step Artifacts

January 1, 1996
Author(s)
V W. Tsai, Theodore V. Vorburger, P Sullivan, Ronald G. Dixson, Richard M. Silver, Edwin R. Williams, J Schneir
The decreasing feature dimensions required in the semiconductor manufacturing industry are placing ever increasing demands upon metrology instruments. Atomic force microscopes (AFMs), which can have 1 nm lateral resolution and sub-angstrom vertical

Progress Towards Accurate Metrology Using Atomic Force Microscopy

January 1, 1996
Author(s)
T Mcwaid, J Schneir, John S. Villarrubia, Ronald G. Dixson, V W. Tsai
Accurate metrology using atomic force microscopy (AFM) requires accurate control of the tip position, an estimate of the tip geometry, and an understanding of the tip-surface interaction forces. We describe recent progress at NIST towards accurate AFM