May 27, 2015
Author(s)
Chukwudi A. Okoro, Lyle E. Levine, Yaw S. Obeng, Ruqing Xu
In this work, an experimental study of the influence of Cu through-silicon via (TSV) diameter on stress build up was performed using synchrotron-based X-ray microdiffraction technique. Three Cu TSV diameters were studied; 3 µm, 5 µm and 8 µm, all of which