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Search Publications by: Igor Levin (Fed)

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Displaying 126 - 150 of 264

Combinatorial Studies of Ba-Y-Cu-O Films for Coated-Conductor Applications

October 23, 2008
Author(s)
Winnie K. Wong-Ng, Makoto Otani, Igor Levin, Peter K. Schenck, Zhi Yang, Guangyao Liu, Lawrence P. Cook, Ron Feenstra, Wei Zheng, Marty Rupich
Phase relationships in bulk and thin film Ba-Y-Cu-O high-Tc superconductor system were determined at processing conditions relevant for industrial production of coated conductors. Our results demonstrated that the absence of BaY2CuO5 (which has a critical

Growth, Crystal Structure, and Properties of Epitaxial BiScO3 Thin Films

August 15, 2008
Author(s)
Igor Levin, Susan Trolier-McKinstry, Michael D. Biegalski, Junling Wang, Alexei A. Belik, E. Takayama-Muromachi
Epitaxial thin films of BiScO3, a compound which is thermodynamically unstable under ambient conditions, were grown on BiFeO3-buffered SrTiO3 substrates despite the very large lattice mismatch between the film and the substrate. The epitaxial BiScO3 films

Piezoelectric Response of Nanoscale PbTiO3 in Composite PbTiO3-CoFe2O4 Epitaxial Films

August 15, 2008
Author(s)
Igor Levin, Tan Zhuopeng, Alexander Roytburd, Katyayani Seal, Brian Rodriguez, Stephen Jesse, Sergei Kalinin, Art Baddorf
Piezoelectric properties of PbTiO3 in 1/3PbTiO3-2/3CoFe2O4 transverse epitaxial nanostructures on differently oriented SrTiO3 were analyzed using conventional and switching-spectroscopy piezoelectric force microscopy. The results confirmed that the

Nature of Transition Layers at the SiO 2 /SiC Interface

July 14, 2008
Author(s)
T Zheleva, Aivars Lelis, G Duscher, F Liu, Igor Levin, M Das
Electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the SiO2/SiC interfaces during processing. We analyzed the structure and chemistry

Crystal Structure, Stoichiometry, and Dielectric Relaxation in Bi 3.32 Nb 7.09 O 22.7 and Structurally Related Ternary Phases

April 17, 2008
Author(s)
I E. Grey, Terrell A. Vanderah, W G. Mumme, Robert S. Roth, Jorge T. Guzman, Juan C. Nino, Igor Levin
Ceramic materials which exhibit high relative dielectric permittivities and are processible at temperatures in the 1000 C to 1200 C range are of interest for embedded elements such as capacitor, resonators, and filters. Complex titanates, niobates, and

Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Using Group VIII Metal Catalysts

November 13, 2007
Author(s)
Siddarth Sundaresan, Albert Davydov, Mark D. Vaudin, Igor Levin, James E. Maslar, Yong-lai Tian, M V. Rao
SiC nanowires are grown by a novel catalyst-assisted sublimation-sandwich (SS) method. This involves microwave heating-assisted physical vapor transport from a source 4H-SiC wafer to a closely positioned substrate 4H-SiC wafer. The substrate wafer is