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Search Publications by: Albert Davydov (Fed)

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Displaying 1 - 25 of 175

Optically-induced quantum transitions in direct-probed mesoscopic 2H-NbSe2 for prototypical bolometers

August 26, 2024
Author(s)
Kishan Jayanand, Gustavo Saenz, Sergiy Krylyuk, Albert Davydov, Goran Karapetrov, Zhonghe Liu, Weidong Zhou, Anupama Kaul
Superconducting transition-edge sensors (TES) have emerged as fascinating devices to detect broadband electromagnetic radiation with low thermal noise. Extensive investigation into novel TES device architectures using conventional elemental or compound

Single-Phase L10-Ordered High Entropy Thin Films with High Magnetic Anisotropy

June 28, 2024
Author(s)
Willie Beeson, Dinesh Bista, Huairuo Zhang, Sergiy Krylyuk, Albert Davydov, Gen Yin, Kai Liu
The vast high entropy alloy (HEA) composition space is promising for discovery of new material phases with unique properties. We explore the potential to achieve high magnetic anisotropy materials in single-phase HEA thin films. Thin films of FeCoNiMnCu

Understanding the Origin and Implication of the Indirect-to-Direct Bandgap Transition in Multilayer InSe

May 2, 2024
Author(s)
Nicholas Pike, Ruth Pachter, Michael Altvater, Chris Stevens, Matthew Klein, Joshua Hendrickson, Huairuo Zhang, Sergiy Krylyuk, Albert Davydov, Nicholas Glavin
Indium selenide (InSe) multilayers have attracted much interest recently due to their electronic and optical properties, partially dependent on the existence of an indirect-to-direct bandgap transition that is correlated to the multilayer thickness. In

Isotopic effects on in-plane hyperbolic phonon polaritons in MoO3

March 4, 2024
Author(s)
Jeremy Schultz, Sergiy Krylyuk, Jeffrey Schwartz, Albert Davydov, Andrea Centrone
Hyperbolic phonon polaritons (HPhPs), hybrids of light and lattice vibrations in polar dielectric crystals, empower nano-photonic applications by enabling the confinement and manipulation of light at the nanoscale. Molybdenum trioxide (α-MoO3) is a

Raman Spectroscopy of Phonon States in NbTe4 and TaTe4 Quasi-1D van der Waals Crystals

February 23, 2024
Author(s)
Zahra Ebrahim Nataj, Fariborz Kargar, Sergiy Krylyuk, Topojit Debnath, Maedeh Taheri, Subhajit Ghosh, Huairuo Zhang, Albert Davydov, Roger Lake, Alexander Balandin
We report the results of polarization-dependent Raman spectroscopy of phonon states in single-crystalline quasi-one-dimensional NbTe4 and TaTe4 van der Waals materials. The measurements were conducted in the wide temperature range from 80 K to 560 K. Our

INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMSTM 2023 EDITION METROLOGY

December 8, 2023
Author(s)
Elisabeth Mansfield, Bryan Barnes, R Joseph Kline, Andras E. Vladar, Yaw S. Obeng, Albert Davydov
The Metrology Chapter identifies emerging measurement challenges from devices, systems, and integration of new materials in the semiconductor industry and describes research and development pathways for meeting them. This includes but not limited to

Emergent ferromagnetism with superconductivity in Fe(Te,Se) van der Waals Josephson junctions

October 23, 2023
Author(s)
Gang Qiu, Hung-Yu Hu, Lunhui Hu, Huairuo Zhang, Chi-Yen Chen, Yanfeng Lyu, Christopher Eckberg, Peng Deng, Sergiy Krylyuk, Albert Davydov, Ruixing Zhang, Kang Wang
Ferromagnetism and superconductivity are two key ingredients for topological superconductors, which can serve as building blocks of fault-tolerant quantum computers. Adversely, ferromagnetism and superconductivity are typically also two hostile orderings

Strain-activated stimulated emission from multilayer MoSe2 in a narrow operation window

September 24, 2023
Author(s)
Yuankun Lin, Noah Hurley, Steve Kamau, Evan Hathaway, Yan Jiang, Roberto Gonzalez Rodriguez, Sinto Varghese, Sergiy Krylyuk, Albert Davydov, Yuanxi Wang, Anupama Kaul, Jingbiao Cui
Herein, photoluminescence (PL) and fluorescence lifetime imaging (FLIM) in multilayer MoSe2 are studied. Strain-activated stimulated emission via defect levels in multilayer MoSe2 under laser excitation is observed, for the first time in defects of

Electrostatic modulation of thermoelectric transport properties of 2H-MoTe2

September 6, 2023
Author(s)
Tianhui Zhu, Sree Sourav Das, Safoura Nayebsadeghi, Fajana Tonni, Sergiy Krylyuk, Costel Constantin, Keivan Esfarjani, Albert Davydov, Mona Zebarjadi
Two-dimensional layered transition metal dichalcogenides are potential thermoelectric candidates with application in on-chip integrated nanoscale cooling and power generation. Here, we report a comprehensive experimental and theoretical study on the in

Mid-Infrared, Near-Infrared, and Visible Nanospectroscopy of Hydrogen-Intercalated MoO3

August 21, 2023
Author(s)
Jeffrey Schwartz, Sergiy Krylyuk, Devon Jakob, Albert Davydov, Andrea Centrone
Control over the local chemical composition and spatial heterogeneities in nanomaterials provides a means to impart new functions and to tailor their properties in many applications. For two-dimensional (2D) van der Waals materials, intercalation is one

The growth of self-intercalated Nb1+xSe2 by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity

June 8, 2023
Author(s)
Peter Litwin, Samantha Jaszewski, Wendy Sarney, Asher Leff, Sergiy Krylyuk, Albert Davydov, Jon Ihlefeld, Stephen McDonnell
We report on the synthesis of self-intercalated Nb1+xSe2 thin films by molecular beam epitaxy. Nb1+xSe2 is a metal-rich phase of NbSe2 where additional Nb atoms populate the van der Waals gap. The grown thin films are studied as a function of the Se to Nb

Rydberg Excitons and Trions in Monolayer MoTe2

April 12, 2023
Author(s)
Souvik Biswas, Aurelie Champagne, Jonah Haber, supavit pokawanvit, Joeson Wong, Hamidreza Akbari, Sergiy Krylyuk, Kenji Watanabe, Albert Davydov, Zakaria Al Balushi, Felipe H. da Jornada, Diana Qiu, Jeffrey Neaton, Harry Atwater
Monolayer transition metal dichalcogenide (TMDC) semiconductors exhibit strong excitonic optical resonances which serve as a microscopic, non-invasive probe into their fundamental properties. Like the hydrogen atom, such excitons can exhibit an entire

Distinct Contact Scaling Effects in MoS2 Transistors Revealed with Asymmetrical Contact Measurements

February 27, 2023
Author(s)
Zhihui Cheng, Curt A. Richter, Hattan Abuzaid, Jonathan Backman, Mathieu Luisier, Huairuo Zhang, Albert Davydov, Guoqing Li, Yifei Yu, Linyou Cao, Aaron Franklin
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomic thin nature which withstands short channel effects and thus enables better scalability. Since improved scalability is the core advantage, both the channel

Elemental excitations in MoI3 one-dimensional van der Waals nanowires

November 28, 2022
Author(s)
Fariborz Kargar, Zahra Barani, Nicholas Sesing, Thuc Mai, Topojit Debnath, Huairuo Zhang, Yuhang Liu, Yanbing Zhu, Subhajit Ghosh, Adam Biacchi, Felipe H. da Jornada, Ludwig Bartels, Tehseen Adel, Angela R. Hight Walker, Albert Davydov, Tina Salguero, Roger Lake, Alexander Balandin
We report the polarization-dependent Raman spectrum of exfoliated MoI3, a van der Waals material with a "true one-dimensional" crystal structure that can be exfoliated to individual atomic chains. The temperature evolution of several Raman features reveals

Phase-transition-induced Thermal Hysteresis in Type-II Weyl Semimetals MoTe2 and Mo(1-x)W(x)Te2

November 19, 2022
Author(s)
Md Sabbir Akhanda, Sergiy Krylyuk, Diane Dickie, Albert Davydov, Fei Han, Mingda Li, Mona Zebarjadi
The resistivity versus temperature measurement is commonly used for identifying temperature-induced phase change and the resulting hysteresis loop. While the resistance is influenced by both the density of states and the carrier lifetimes, the Seebeck

Heterojunction tunnel triodes based on two-dimensional metal selenide and three-dimensional silicon

October 27, 2022
Author(s)
Jinshui Miao, Chloe Leblanc, Jinjin Wang, Yue Gu, Xiwen Liu, Baokun Song, Huairuo Zhang, Sergiy Krylyuk, Weida Hu, Albert Davydov, Tyson Back, Nicholas Glavin, Deep Jariwala
Low power consumption in the static and dynamic modes of operation is a key requirement in the development of modern electronics. Tunnel field-effect transistors with direct band-to-band charge tunnelling and steep-subthreshold-slope transfer

Transport Properties of Few-Layer NbSe2: from Electronic Structure to Thermoelectric Properties

July 20, 2022
Author(s)
Tianhui Zhu, Peter Litwin, Md Golam Rosul, Devin Jessup, Md Sabbir Akhanda, Farjana Tonni, Sergiy Krylyuk, Albert Davydov, Petra Reinke, Stephen McDonnell, Mona Zebarjadi
4-layer NbSe2 is grown on SiO2 by molecular beam epitaxy. The in-situ X-ray photoelectron spectroscopy (XPS) measurements suggest a Nb-rich stoichiometry (Nb1+xSe2) likely due to intercalation of Nb atoms in between the NbSe2 layers. The metallic nature of

Rapid Phase Transition of Al2O3 Encapsulated MoTe2 via Thermal Annealing

July 19, 2022
Author(s)
Rohan Sengupta, Saroj Dangi, Sergiy Krylyuk, Albert Davydov, Spyridon Pavlidis
MoTe2 has gained a lot of attention recently as a potential phase change material candidate for low-power nonvolatile switches and high-density memory applications, due to the smallest predicted energy offset between its semiconducting 2H and semimetallic

Self-Driven Highly Responsive PN Junction InSe Heterostructure Near-Infrared Light Detector

June 30, 2022
Author(s)
Chandraman Patil, Chaobo Dong, Hao Wang, Hamed Dalir, Sergiy Krylyuk, Huairuo Zhang, Albert Davydov, Volker Sorger
Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to engineering the light

Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures

April 29, 2022
Author(s)
Norman A. Sanford, Paul T. Blanchard, Alexana Roshko, Ashwin Rishinaramangalam, Daniel Feezell, Albert Davydov
Laser-assisted atom probe tomography (L-APT) was used to measure the indium mole fraction x of c-plane, MOCVD-grown, GaN/InxGa1-xN/GaN test structures and the results were compared with Rutherford backscattering analysis (RBS). Four separate sample types